Abstract
Controlling the growth of nanowires and assembling them on planar substrates is of enormous importance for nanoscale device applications using the bottom-up approach. The tin-doped indiumoxide (ITO) nanowires were grown via direct thermal-chemical vapor deposition without the use of a pre-deposited catalyst. Growth was initiated by the formation of a Sn droplet that acted as a catalyst for ITO nanowire growth. With increasing growth time, the ITO nanowires grew horizontally in the early stages and then showed a horizontal-to-vertical growth mode transition. By reducing the rate of growth, we were able to obtain horizontally grown ITO nanowires without vertically grown ones. This is due to the horizontal growth period being increased by extending the transition time to vertical growth by reducing the growth rate. These results not only give important implications for the horizontal growth of other nanowires, but also point to potential applications in nanowire devices.
Original language | English |
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Pages (from-to) | 143-147 |
Number of pages | 5 |
Journal | New Physics: Sae Mulli |
Volume | 70 |
Issue number | 2 |
DOIs | |
State | Published - 2020 |
Keywords
- ITO nanowires
- Morphology
- Self-catalyst