Hot carrier instability associated with hot carrier injection and charge injection in In_0.7Ga_0.3As MOSFETs with high-κ stacks

Engineering

• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Charge Injection 100%
• Hot Carrier Injection 100%
• Defect Site 60%
• Defects 40%
• Indium Gallium Arsenide 40%
• Dielectrics 20%
• Drain Voltage 20%
• Stress Condition 20%
• Recovery Ratio 20%
• Source Region 20%
• Gate Voltage 20%
• Gate Oxide 20%

Material Science

• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Hot Carrier 100%
• Al2O3 37%
• Oxide Compound 25%
• Charge Trapping 25%
• Indium Gallium Arsenide 25%
• Dielectric Material 12%