Hybrid UV Active Pixel Sensor Implemented Using GaN MSM UV Sensor and Si-Based Circuit

Chang Ju Lee, Chul Ho Won, Myunghan Bae, Jang Kyoo Shin, Jung Hee Lee, Sung Ho Hahm

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

A hybrid active pixel sensor (APS) was implemented for ultraviolet (UV) imagers by combining a metal-semiconductor-metal (MSM)-type GaN UV sensor and a standard Si CMOS APS controller. The photodetector region of the APS circuit was replaced by a GaN MSM UV sensor, and it was connected together on the printed circuit board with standard Si CMOS APS circuit chip. The dark and photoresponsive current densities of the fabricated MSM UV sensor were 2.5 × 10-6 and 1.6 × 10^-6 A/cm2, respectively, at 10 V bias. The fabricated hybrid UV APS has clearly distinguishable ON/OFF operation states under dark and 365-nm UV irradiation conditions. The calculated photoresponsivity of the hybrid-type GaN UV APS was as high as 5.1 V/W.

Original languageEnglish
Article number7109105
Pages (from-to)5071-5074
Number of pages4
JournalIEEE Sensors Journal
Volume15
Issue number9
DOIs
StatePublished - 1 Sep 2015

Keywords

  • GaN
  • Hybrid UV APS
  • MSM
  • UV image sensor
  • UV sensor

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