Hydrogen incorporation, diffusivity and evolution in bulk ZnO

K. Ip; M. E. Overberg; Y. W. Heo; D. P. Norton; S. J. Pearton; C. E. Stutz; S. O. Kucheyev; C. Jagadish; J. S. Williams; B. Luo; F. Ren; D. C. Look; J. M. Zavada

doi:10.1016/S0038-1101(03)00207-7

Hydrogen incorporation, diffusivity and evolution in bulk ZnO

K. Ip
, M. E. Overberg
, Y. W. Heo
, D. P. Norton
, S. J. Pearton
, C. E. Stutz
, S. O. Kucheyev
, C. Jagadish
, J. S. Williams
, B. Luo
, F. Ren
, D. C. Look
, J. M. Zavada

University of Florida
Air Force Research Laboratory
Australian National University
Lawrence Livermore National Laboratory
Wright State University
United States Army Research Office

Research output: Contribution to journal › Article › peer-review

52 Scopus citations

Abstract

Hydrogen is readily incorporated into bulk, single-crystal ZnO during exposure to plasmas at moderate (100-300°C) temperatures. Incorporation depths of >25 μm were obtained in 0.5 h at 300°C, producing a diffusivity of ∼8 × 10^-10 cm²/Vs at this temperature. The activation energy for diffusion is 0.17 ± 0.12 eV, indicating an interstitial mechanism. Subsequent annealing at 500-600 °C is sufficient to evolve all of the hydrogen out of the ZnO, at least to the sensitivity of Secondary Ion Mass Spectrometry (< 5 × 10¹⁵ cm^-3). The thermal stability of hydrogen retention is slightly greater when the hydrogen is incorporated by direct implantation relative to plasma exposure, due to trapping at residual damage.

Original language	English
Pages (from-to)	2255-2259
Number of pages	5
Journal	Solid-State Electronics
Volume	47
Issue number	12
DOIs	https://doi.org/10.1016/S0038-1101(03)00207-7
State	Published - Dec 2003

Keywords

Diffusion
Hydrogen
ZnO

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10.1016/S0038-1101(03)00207-7

Cite this

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title = "Hydrogen incorporation, diffusivity and evolution in bulk ZnO",

abstract = "Hydrogen is readily incorporated into bulk, single-crystal ZnO during exposure to plasmas at moderate (100-300°C) temperatures. Incorporation depths of >25 μm were obtained in 0.5 h at 300°C, producing a diffusivity of ∼8 × 10-10 cm2/Vs at this temperature. The activation energy for diffusion is 0.17 ± 0.12 eV, indicating an interstitial mechanism. Subsequent annealing at 500-600 °C is sufficient to evolve all of the hydrogen out of the ZnO, at least to the sensitivity of Secondary Ion Mass Spectrometry (< 5 × 1015 cm-3). The thermal stability of hydrogen retention is slightly greater when the hydrogen is incorporated by direct implantation relative to plasma exposure, due to trapping at residual damage.",

keywords = "Diffusion, Hydrogen, ZnO",

author = "K. Ip and Overberg, \{M. E.\} and Heo, \{Y. W.\} and Norton, \{D. P.\} and Pearton, \{S. J.\} and Stutz, \{C. E.\} and Kucheyev, \{S. O.\} and C. Jagadish and Williams, \{J. S.\} and B. Luo and F. Ren and Look, \{D. C.\} and Zavada, \{J. M.\}",

year = "2003",

month = dec,

doi = "10.1016/S0038-1101(03)00207-7",

language = "English",

volume = "47",

pages = "2255--2259",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Ltd.",

number = "12",

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TY - JOUR

T1 - Hydrogen incorporation, diffusivity and evolution in bulk ZnO

AU - Ip, K.

AU - Overberg, M. E.

AU - Heo, Y. W.

AU - Norton, D. P.

AU - Pearton, S. J.

AU - Stutz, C. E.

AU - Kucheyev, S. O.

AU - Jagadish, C.

AU - Williams, J. S.

AU - Luo, B.

AU - Ren, F.

AU - Look, D. C.

AU - Zavada, J. M.

PY - 2003/12

Y1 - 2003/12

N2 - Hydrogen is readily incorporated into bulk, single-crystal ZnO during exposure to plasmas at moderate (100-300°C) temperatures. Incorporation depths of >25 μm were obtained in 0.5 h at 300°C, producing a diffusivity of ∼8 × 10-10 cm2/Vs at this temperature. The activation energy for diffusion is 0.17 ± 0.12 eV, indicating an interstitial mechanism. Subsequent annealing at 500-600 °C is sufficient to evolve all of the hydrogen out of the ZnO, at least to the sensitivity of Secondary Ion Mass Spectrometry (< 5 × 1015 cm-3). The thermal stability of hydrogen retention is slightly greater when the hydrogen is incorporated by direct implantation relative to plasma exposure, due to trapping at residual damage.

AB - Hydrogen is readily incorporated into bulk, single-crystal ZnO during exposure to plasmas at moderate (100-300°C) temperatures. Incorporation depths of >25 μm were obtained in 0.5 h at 300°C, producing a diffusivity of ∼8 × 10-10 cm2/Vs at this temperature. The activation energy for diffusion is 0.17 ± 0.12 eV, indicating an interstitial mechanism. Subsequent annealing at 500-600 °C is sufficient to evolve all of the hydrogen out of the ZnO, at least to the sensitivity of Secondary Ion Mass Spectrometry (< 5 × 1015 cm-3). The thermal stability of hydrogen retention is slightly greater when the hydrogen is incorporated by direct implantation relative to plasma exposure, due to trapping at residual damage.

KW - Diffusion

KW - Hydrogen

KW - ZnO

UR - https://www.scopus.com/pages/publications/0142086883

U2 - 10.1016/S0038-1101(03)00207-7

DO - 10.1016/S0038-1101(03)00207-7

M3 - Article

AN - SCOPUS:0142086883

SN - 0038-1101

VL - 47

SP - 2255

EP - 2259

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 12

ER -

Hydrogen incorporation, diffusivity and evolution in bulk ZnO

Abstract

Keywords

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