TY - JOUR
T1 - Hydrothermal Synthesis in Gap
T2 - Conformal Deposition of Textured Hematite Thin Films for Efficient Photoelectrochemical Water Splitting
AU - Kong, Heejung
AU - Park, Ji Sang
AU - Kim, Jong Hwa
AU - Hwang, Suwon
AU - Yeo, Junyeob
N1 - Publisher Copyright:
© 2022 American Chemical Society. All rights reserved.
PY - 2022/4/13
Y1 - 2022/4/13
N2 - Obtaining high performance of hematite (α-Fe2O3) in a photoelectrochemical (PEC) water splitting cell is a challenging task because of its poor electrical conductivity and extremely short carrier lifetime. Here, we introduce a new hydrothermal method, called gap hydrothermal synthesis (GAP-HS), to obtain textured hematite thin films with an outstanding PEC water oxidation performance. GAP-HS proceeds in a precursor-solution-filled narrow gap to induce an anisotropic ion supply. This gives rise to an interesting phenomenon associated with the growth of nanomaterials that reflect the texture of the used substrates. Also, GAP-HS causes the preferential growth of hematite crystal along the [110] direction, leading to improved electrical conductivity within the (001) basal plane. The hematite thin films obtained via GAP-HS exhibit a very high photocurrent of more than 1.3 mA cm-2at 1.23 V with respect to the reversible hydrogen electrode with 550 °C annealing only. It is the highest photocurrent, to the best of our knowledge, obtained for the hydrothermally synthesized pristine hematite photoanode. Because the low-temperature annealing allows avoiding of substrate deformation, the hematite thin films obtained via GAP-HS are expected to be advantageous for tandem-cell configuration.
AB - Obtaining high performance of hematite (α-Fe2O3) in a photoelectrochemical (PEC) water splitting cell is a challenging task because of its poor electrical conductivity and extremely short carrier lifetime. Here, we introduce a new hydrothermal method, called gap hydrothermal synthesis (GAP-HS), to obtain textured hematite thin films with an outstanding PEC water oxidation performance. GAP-HS proceeds in a precursor-solution-filled narrow gap to induce an anisotropic ion supply. This gives rise to an interesting phenomenon associated with the growth of nanomaterials that reflect the texture of the used substrates. Also, GAP-HS causes the preferential growth of hematite crystal along the [110] direction, leading to improved electrical conductivity within the (001) basal plane. The hematite thin films obtained via GAP-HS exhibit a very high photocurrent of more than 1.3 mA cm-2at 1.23 V with respect to the reversible hydrogen electrode with 550 °C annealing only. It is the highest photocurrent, to the best of our knowledge, obtained for the hydrothermally synthesized pristine hematite photoanode. Because the low-temperature annealing allows avoiding of substrate deformation, the hematite thin films obtained via GAP-HS are expected to be advantageous for tandem-cell configuration.
KW - hematite thin films
KW - hydrothermal synthesis
KW - photoanodes
KW - photoelectrochemical water splitting
KW - preferential growth
UR - http://www.scopus.com/inward/record.url?scp=85128187682&partnerID=8YFLogxK
U2 - 10.1021/acsami.2c00128
DO - 10.1021/acsami.2c00128
M3 - Article
C2 - 35362321
AN - SCOPUS:85128187682
SN - 1944-8244
VL - 14
SP - 16515
EP - 16526
JO - ACS applied materials & interfaces
JF - ACS applied materials & interfaces
IS - 14
ER -