ICP dry etching of ZnO and effects of hydrogen

K. Ip; M. E. Overberg; K. W. Baik; R. G. Wilson; S. O. Kucheyev; J. S. Williams; C. Jagadish; F. Ren; Y. W. Heo; D. P. Norton; J. M. Zavada; S. J. Pearton

doi:10.1016/S0038-1101(03)00211-9

ICP dry etching of ZnO and effects of hydrogen

K. Ip, M. E. Overberg, K. W. Baik, R. G. Wilson, S. O. Kucheyev, J. S. Williams, C. Jagadish, F. Ren, Y. W. Heo, D. P. Norton, J. M. Zavada, S. J. Pearton

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22 Scopus citations

Abstract

Two different plasma chemistries for etching ZnO were examined. Both Cl₂/Ar and CH₄/H₂/Ar produced etch rates which increased linearly with rf power, reaching values of ∼1200 Å/min for Cl₂/Ar and ∼3000 Å/min for CH₄/H₂/Ar. The evolution of surface morphology, surface composition, and PL intensity as a function of energy during etching were monitored. The effect of H in ZnO was studied using direct implantation at doses of 10¹⁵-10¹⁶ cm^-2, followed by annealing at 500-700 °C. The hydrogen shows significant outdiffusion at 500 °C and is below the detection limits of SIMS after 700 °C anneals. SEM of the etched features showed anisotropic sidewalls, indicative of an ion-driven etch mechanism.

Original language	English
Pages (from-to)	2289-2294
Number of pages	6
Journal	Solid-State Electronics
Volume	47
Issue number	12
DOIs	https://doi.org/10.1016/S0038-1101(03)00211-9
State	Published - Dec 2003

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@article{6c4bd1522ffe4e0d84db7ed98dee4963,

title = "ICP dry etching of ZnO and effects of hydrogen",

abstract = "Two different plasma chemistries for etching ZnO were examined. Both Cl2/Ar and CH4/H2/Ar produced etch rates which increased linearly with rf power, reaching values of ∼1200 {\AA}/min for Cl2/Ar and ∼3000 {\AA}/min for CH4/H2/Ar. The evolution of surface morphology, surface composition, and PL intensity as a function of energy during etching were monitored. The effect of H in ZnO was studied using direct implantation at doses of 1015-1016 cm-2, followed by annealing at 500-700 °C. The hydrogen shows significant outdiffusion at 500 °C and is below the detection limits of SIMS after 700 °C anneals. SEM of the etched features showed anisotropic sidewalls, indicative of an ion-driven etch mechanism.",

author = "K. Ip and Overberg, {M. E.} and Baik, {K. W.} and Wilson, {R. G.} and Kucheyev, {S. O.} and Williams, {J. S.} and C. Jagadish and F. Ren and Heo, {Y. W.} and Norton, {D. P.} and Zavada, {J. M.} and Pearton, {S. J.}",

year = "2003",

month = dec,

doi = "10.1016/S0038-1101(03)00211-9",

language = "English",

volume = "47",

pages = "2289--2294",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Ltd.",

number = "12",

}

TY - JOUR

T1 - ICP dry etching of ZnO and effects of hydrogen

AU - Ip, K.

AU - Overberg, M. E.

AU - Baik, K. W.

AU - Wilson, R. G.

AU - Kucheyev, S. O.

AU - Williams, J. S.

AU - Jagadish, C.

AU - Ren, F.

AU - Heo, Y. W.

AU - Norton, D. P.

AU - Zavada, J. M.

AU - Pearton, S. J.

PY - 2003/12

Y1 - 2003/12

N2 - Two different plasma chemistries for etching ZnO were examined. Both Cl2/Ar and CH4/H2/Ar produced etch rates which increased linearly with rf power, reaching values of ∼1200 Å/min for Cl2/Ar and ∼3000 Å/min for CH4/H2/Ar. The evolution of surface morphology, surface composition, and PL intensity as a function of energy during etching were monitored. The effect of H in ZnO was studied using direct implantation at doses of 1015-1016 cm-2, followed by annealing at 500-700 °C. The hydrogen shows significant outdiffusion at 500 °C and is below the detection limits of SIMS after 700 °C anneals. SEM of the etched features showed anisotropic sidewalls, indicative of an ion-driven etch mechanism.

AB - Two different plasma chemistries for etching ZnO were examined. Both Cl2/Ar and CH4/H2/Ar produced etch rates which increased linearly with rf power, reaching values of ∼1200 Å/min for Cl2/Ar and ∼3000 Å/min for CH4/H2/Ar. The evolution of surface morphology, surface composition, and PL intensity as a function of energy during etching were monitored. The effect of H in ZnO was studied using direct implantation at doses of 1015-1016 cm-2, followed by annealing at 500-700 °C. The hydrogen shows significant outdiffusion at 500 °C and is below the detection limits of SIMS after 700 °C anneals. SEM of the etched features showed anisotropic sidewalls, indicative of an ion-driven etch mechanism.

UR - http://www.scopus.com/inward/record.url?scp=0142055136&partnerID=8YFLogxK

U2 - 10.1016/S0038-1101(03)00211-9

DO - 10.1016/S0038-1101(03)00211-9

M3 - Article

AN - SCOPUS:0142055136

SN - 0038-1101

VL - 47

SP - 2289

EP - 2294

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 12

ER -

ICP dry etching of ZnO and effects of hydrogen

Abstract

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