ICP dry etching of ZnO and effects of hydrogen

K. Ip; M. E. Overberg; K. W. Baik; R. G. Wilson; S. O. Kucheyev; J. S. Williams; C. Jagadish; F. Ren; Y. W. Heo; D. P. Norton; J. M. Zavada; S. J. Pearton

doi:10.1016/S0038-1101(03)00211-9

ICP dry etching of ZnO and effects of hydrogen

K. Ip
, M. E. Overberg
, K. W. Baik
, R. G. Wilson
, S. O. Kucheyev
, J. S. Williams
, C. Jagadish
, F. Ren
, Y. W. Heo
, D. P. Norton
, J. M. Zavada
, S. J. Pearton

University of Florida
Australian National University
Lawrence Livermore National Laboratory
United States Army Research Office

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

Two different plasma chemistries for etching ZnO were examined. Both Cl₂/Ar and CH₄/H₂/Ar produced etch rates which increased linearly with rf power, reaching values of ∼1200 Å/min for Cl₂/Ar and ∼3000 Å/min for CH₄/H₂/Ar. The evolution of surface morphology, surface composition, and PL intensity as a function of energy during etching were monitored. The effect of H in ZnO was studied using direct implantation at doses of 10¹⁵-10¹⁶ cm^-2, followed by annealing at 500-700 °C. The hydrogen shows significant outdiffusion at 500 °C and is below the detection limits of SIMS after 700 °C anneals. SEM of the etched features showed anisotropic sidewalls, indicative of an ion-driven etch mechanism.

Original language	English
Pages (from-to)	2289-2294
Number of pages	6
Journal	Solid-State Electronics
Volume	47
Issue number	12
DOIs	https://doi.org/10.1016/S0038-1101(03)00211-9
State	Published - Dec 2003

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@article{6c4bd1522ffe4e0d84db7ed98dee4963,

title = "ICP dry etching of ZnO and effects of hydrogen",

abstract = "Two different plasma chemistries for etching ZnO were examined. Both Cl2/Ar and CH4/H2/Ar produced etch rates which increased linearly with rf power, reaching values of ∼1200 {\AA}/min for Cl2/Ar and ∼3000 {\AA}/min for CH4/H2/Ar. The evolution of surface morphology, surface composition, and PL intensity as a function of energy during etching were monitored. The effect of H in ZnO was studied using direct implantation at doses of 1015-1016 cm-2, followed by annealing at 500-700 °C. The hydrogen shows significant outdiffusion at 500 °C and is below the detection limits of SIMS after 700 °C anneals. SEM of the etched features showed anisotropic sidewalls, indicative of an ion-driven etch mechanism.",

author = "K. Ip and Overberg, \{M. E.\} and Baik, \{K. W.\} and Wilson, \{R. G.\} and Kucheyev, \{S. O.\} and Williams, \{J. S.\} and C. Jagadish and F. Ren and Heo, \{Y. W.\} and Norton, \{D. P.\} and Zavada, \{J. M.\} and Pearton, \{S. J.\}",

year = "2003",

month = dec,

doi = "10.1016/S0038-1101(03)00211-9",

language = "English",

volume = "47",

pages = "2289--2294",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Ltd.",

number = "12",

}

TY - JOUR

T1 - ICP dry etching of ZnO and effects of hydrogen

AU - Ip, K.

AU - Overberg, M. E.

AU - Baik, K. W.

AU - Wilson, R. G.

AU - Kucheyev, S. O.

AU - Williams, J. S.

AU - Jagadish, C.

AU - Ren, F.

AU - Heo, Y. W.

AU - Norton, D. P.

AU - Zavada, J. M.

AU - Pearton, S. J.

PY - 2003/12

Y1 - 2003/12

N2 - Two different plasma chemistries for etching ZnO were examined. Both Cl2/Ar and CH4/H2/Ar produced etch rates which increased linearly with rf power, reaching values of ∼1200 Å/min for Cl2/Ar and ∼3000 Å/min for CH4/H2/Ar. The evolution of surface morphology, surface composition, and PL intensity as a function of energy during etching were monitored. The effect of H in ZnO was studied using direct implantation at doses of 1015-1016 cm-2, followed by annealing at 500-700 °C. The hydrogen shows significant outdiffusion at 500 °C and is below the detection limits of SIMS after 700 °C anneals. SEM of the etched features showed anisotropic sidewalls, indicative of an ion-driven etch mechanism.

AB - Two different plasma chemistries for etching ZnO were examined. Both Cl2/Ar and CH4/H2/Ar produced etch rates which increased linearly with rf power, reaching values of ∼1200 Å/min for Cl2/Ar and ∼3000 Å/min for CH4/H2/Ar. The evolution of surface morphology, surface composition, and PL intensity as a function of energy during etching were monitored. The effect of H in ZnO was studied using direct implantation at doses of 1015-1016 cm-2, followed by annealing at 500-700 °C. The hydrogen shows significant outdiffusion at 500 °C and is below the detection limits of SIMS after 700 °C anneals. SEM of the etched features showed anisotropic sidewalls, indicative of an ion-driven etch mechanism.

UR - https://www.scopus.com/pages/publications/0142055136

U2 - 10.1016/S0038-1101(03)00211-9

DO - 10.1016/S0038-1101(03)00211-9

M3 - Article

AN - SCOPUS:0142055136

SN - 0038-1101

VL - 47

SP - 2289

EP - 2294

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 12

ER -

ICP dry etching of ZnO and effects of hydrogen

Abstract

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