Impact of Device Area and Film Thickness on Performance of Sol-Gel Processed ZrO2 RRAM

Sojeong Lee; Taegyun Kim; Bongho Jang; Won Yong Lee; Kyu Chan Song; Hyun Seo Kim; Gyung Yeop Do; Seung Bum Hwang; Seungjun Chung; Jaewon Jang

doi:10.1109/LED.2018.2820141

Impact of Device Area and Film Thickness on Performance of Sol-Gel Processed ZrO₂ RRAM

Sojeong Lee, Taegyun Kim, Bongho Jang, Won Yong Lee, Kyu Chan Song, Hyun Seo Kim, Gyung Yeop Do, Seung Bum Hwang, Seungjun Chung, Jaewon Jang

School of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

35 Scopus citations

Abstract

A sol-gel-processed ZrO₂ layer was used as an active layer for a resistive random-access memory (RRAM). With top Ag electrodes, the fabricated devices show conventional bipolar switching memory properties. The impacts of device size and ZrO₂ film thickness on device performance were investigated. The scaling of the device area and the successful increase in ZrO₂ film thickness increased the high-resistance state (HRS)/low-resistance state (LRS) ratio values and improved the non-volatile memory properties, such as retention and endurance. The fabricated ITO/ZrO₂/Ag RRAM shows good retention and endurance properties. The HRS and LRS were found to last for 10⁴ s without any significant degradation.

Original language	English
Pages (from-to)	668-671
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	39
Issue number	5
DOIs	https://doi.org/10.1109/LED.2018.2820141
State	Published - May 2018

Keywords

electrochemical metallization cells
resistive random access memory
Sol-gel
ZrO

Access to Document

10.1109/LED.2018.2820141

Cite this

@article{6e4cb7c9bcb94551b5bf70c752388eb9,

title = "Impact of Device Area and Film Thickness on Performance of Sol-Gel Processed ZrO2 RRAM",

abstract = "A sol-gel-processed ZrO2 layer was used as an active layer for a resistive random-access memory (RRAM). With top Ag electrodes, the fabricated devices show conventional bipolar switching memory properties. The impacts of device size and ZrO2 film thickness on device performance were investigated. The scaling of the device area and the successful increase in ZrO2 film thickness increased the high-resistance state (HRS)/low-resistance state (LRS) ratio values and improved the non-volatile memory properties, such as retention and endurance. The fabricated ITO/ZrO2/Ag RRAM shows good retention and endurance properties. The HRS and LRS were found to last for 104 s without any significant degradation.",

keywords = "electrochemical metallization cells, resistive random access memory, Sol-gel, ZrO",

author = "Sojeong Lee and Taegyun Kim and Bongho Jang and Lee, {Won Yong} and Song, {Kyu Chan} and Kim, {Hyun Seo} and Do, {Gyung Yeop} and Hwang, {Seung Bum} and Seungjun Chung and Jaewon Jang",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

year = "2018",

month = may,

doi = "10.1109/LED.2018.2820141",

language = "English",

volume = "39",

pages = "668--671",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "5",

}

TY - JOUR

T1 - Impact of Device Area and Film Thickness on Performance of Sol-Gel Processed ZrO2 RRAM

AU - Lee, Sojeong

AU - Kim, Taegyun

AU - Jang, Bongho

AU - Lee, Won Yong

AU - Song, Kyu Chan

AU - Kim, Hyun Seo

AU - Do, Gyung Yeop

AU - Hwang, Seung Bum

AU - Chung, Seungjun

AU - Jang, Jaewon

PY - 2018/5

Y1 - 2018/5

N2 - A sol-gel-processed ZrO2 layer was used as an active layer for a resistive random-access memory (RRAM). With top Ag electrodes, the fabricated devices show conventional bipolar switching memory properties. The impacts of device size and ZrO2 film thickness on device performance were investigated. The scaling of the device area and the successful increase in ZrO2 film thickness increased the high-resistance state (HRS)/low-resistance state (LRS) ratio values and improved the non-volatile memory properties, such as retention and endurance. The fabricated ITO/ZrO2/Ag RRAM shows good retention and endurance properties. The HRS and LRS were found to last for 104 s without any significant degradation.

AB - A sol-gel-processed ZrO2 layer was used as an active layer for a resistive random-access memory (RRAM). With top Ag electrodes, the fabricated devices show conventional bipolar switching memory properties. The impacts of device size and ZrO2 film thickness on device performance were investigated. The scaling of the device area and the successful increase in ZrO2 film thickness increased the high-resistance state (HRS)/low-resistance state (LRS) ratio values and improved the non-volatile memory properties, such as retention and endurance. The fabricated ITO/ZrO2/Ag RRAM shows good retention and endurance properties. The HRS and LRS were found to last for 104 s without any significant degradation.

KW - electrochemical metallization cells

KW - resistive random access memory

KW - Sol-gel

KW - ZrO

UR - http://www.scopus.com/inward/record.url?scp=85044790595&partnerID=8YFLogxK

U2 - 10.1109/LED.2018.2820141

DO - 10.1109/LED.2018.2820141

M3 - Article

AN - SCOPUS:85044790595

SN - 0741-3106

VL - 39

SP - 668

EP - 671

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 5

ER -

Impact of Device Area and Film Thickness on Performance of Sol-Gel Processed ZrO₂ RRAM

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this