Impact of fast and slow transient charging effect on reliability instability in In0.7Ga0.3As quantum-well MOSFETs with high-κ dielectrics

Hyuk Min Kwon; Dae Hyun Kim; Tae Woo Kim

doi:10.35848/1347-4065/abbfe5

Impact of fast and slow transient charging effect on reliability instability in In_0.7Ga_0.3As quantum-well MOSFETs with high-κ dielectrics

Hyuk Min Kwon, Dae Hyun Kim, Tae Woo Kim

School of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

The impact of the fast and slow transient charge effect within defect sites of high-κ dielectrics for Al2O3 and bi-layer Al2O3/HfO2 In0.7Ga0.3As quantum-well (QW) MOSFETs was investigated in this report. In particular, the initial rapid degradation of the drain current for bi-layer Al2O3/HfO2 In0.7Ga0.3As QW MOSFETs was due to the fast transient charging effect. The continued decrease of the drain current with pulse time was attributed to the slow transient charging effect, which is located near the interface oxide traps to respond to increased charging time. The degradation of drain current for bi-layer Al2O3/HfO2 In0.7Ga0.3As QW MOSFETs was much higher than that of the Al2O3 In0.7Ga0.3As QW MOSFET, which is associated with reliability instability of the HfO2 layer for In0.7Ga0.3As QW MOSFETs. The detailed reliability instability mechanism for bi-layer Al2O3/HfO2 In0.7Ga0.3As QW MOSFETs was analyzed based on the fast/slow transient charge effect and flicker (1/f) noise characteristics.

Original language	English
Article number	110903
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	59
Issue number	11
DOIs	https://doi.org/10.35848/1347-4065/abbfe5
State	Published - Nov 2020

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title = "Impact of fast and slow transient charging effect on reliability instability in In0.7Ga0.3As quantum-well MOSFETs with high-κ dielectrics",

abstract = "The impact of the fast and slow transient charge effect within defect sites of high-κ dielectrics for Al2O3 and bi-layer Al2O3/HfO2 In0.7Ga0.3As quantum-well (QW) MOSFETs was investigated in this report. In particular, the initial rapid degradation of the drain current for bi-layer Al2O3/HfO2 In0.7Ga0.3As QW MOSFETs was due to the fast transient charging effect. The continued decrease of the drain current with pulse time was attributed to the slow transient charging effect, which is located near the interface oxide traps to respond to increased charging time. The degradation of drain current for bi-layer Al2O3/HfO2 In0.7Ga0.3As QW MOSFETs was much higher than that of the Al2O3 In0.7Ga0.3As QW MOSFET, which is associated with reliability instability of the HfO2 layer for In0.7Ga0.3As QW MOSFETs. The detailed reliability instability mechanism for bi-layer Al2O3/HfO2 In0.7Ga0.3As QW MOSFETs was analyzed based on the fast/slow transient charge effect and flicker (1/f) noise characteristics.",

author = "Kwon, {Hyuk Min} and Kim, {Dae Hyun} and Kim, {Tae Woo}",

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Impact of fast and slow transient charging effect on reliability instability in In_0.7Ga_0.3As quantum-well MOSFETs with high-κ dielectrics. / Kwon, Hyuk Min; Kim, Dae Hyun; Kim, Tae Woo.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 59, No. 11, 110903, 11.2020.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Impact of fast and slow transient charging effect on reliability instability in In0.7Ga0.3As quantum-well MOSFETs with high-κ dielectrics

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AU - Kim, Dae Hyun

AU - Kim, Tae Woo

PY - 2020/11

Y1 - 2020/11

N2 - The impact of the fast and slow transient charge effect within defect sites of high-κ dielectrics for Al2O3 and bi-layer Al2O3/HfO2 In0.7Ga0.3As quantum-well (QW) MOSFETs was investigated in this report. In particular, the initial rapid degradation of the drain current for bi-layer Al2O3/HfO2 In0.7Ga0.3As QW MOSFETs was due to the fast transient charging effect. The continued decrease of the drain current with pulse time was attributed to the slow transient charging effect, which is located near the interface oxide traps to respond to increased charging time. The degradation of drain current for bi-layer Al2O3/HfO2 In0.7Ga0.3As QW MOSFETs was much higher than that of the Al2O3 In0.7Ga0.3As QW MOSFET, which is associated with reliability instability of the HfO2 layer for In0.7Ga0.3As QW MOSFETs. The detailed reliability instability mechanism for bi-layer Al2O3/HfO2 In0.7Ga0.3As QW MOSFETs was analyzed based on the fast/slow transient charge effect and flicker (1/f) noise characteristics.

AB - The impact of the fast and slow transient charge effect within defect sites of high-κ dielectrics for Al2O3 and bi-layer Al2O3/HfO2 In0.7Ga0.3As quantum-well (QW) MOSFETs was investigated in this report. In particular, the initial rapid degradation of the drain current for bi-layer Al2O3/HfO2 In0.7Ga0.3As QW MOSFETs was due to the fast transient charging effect. The continued decrease of the drain current with pulse time was attributed to the slow transient charging effect, which is located near the interface oxide traps to respond to increased charging time. The degradation of drain current for bi-layer Al2O3/HfO2 In0.7Ga0.3As QW MOSFETs was much higher than that of the Al2O3 In0.7Ga0.3As QW MOSFET, which is associated with reliability instability of the HfO2 layer for In0.7Ga0.3As QW MOSFETs. The detailed reliability instability mechanism for bi-layer Al2O3/HfO2 In0.7Ga0.3As QW MOSFETs was analyzed based on the fast/slow transient charge effect and flicker (1/f) noise characteristics.

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Impact of fast and slow transient charging effect on reliability instability in In_0.7Ga_0.3As quantum-well MOSFETs with high-κ dielectrics

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