Impact of H2 High-Pressure Annealing onto InGaAs Quantum-Well Metal-Oxide-Semiconductor Field-Effect Transistors with Al2O3/HfO2 Gate-Stack

Tae Woo Kim, Hyuk Min Kwon, Seung Heon Shin, Chan Soo Shin, Won Kyu Park, Eddie Chiu, Manny Rivera, Jae Ik Lew, Dmitry Veksler, Tommaso Orzali, Dae Hyun Kim

Research output: Contribution to journalArticlepeer-review

19 Scopus citations

Abstract

We report on the impact of H2 high-pressure annealing (HPA) onto In0.7Ga0.3As MOSCAPs and quantum-well (QW) MOSFETs with Al2O3/HfO2 gate-stack. After HPA with process condition of 300 °C, H2 ambient and pressure of 20 atm, we observed notable improvements of the capacitance-voltage (CV) characteristics in InGaAs MOSCAPs with Al2O3/HfO2 gate-stack, such as reduction of equivalent-oxide-thickness and less frequency dispersion in the accumulation region. There was 20% improvement of the interfacial trap density ( D-{{\rm {it}}}). Then, we incorporated the HPA process into the fabrication of sub-100-nm In0.7Ga0.3As QW MOSFETs, to investigate the impact of HPA process. After HPA process, the device with L-{g} = 50 nm exhibits improved subthreshold-swing (SS) = 105 mV/decade, in comparison with SS = 130 mV/decade for the reference device without HPA process. Finally, we carried out reliability assessment under a constant-voltage-stress (CVS), and it turns out that the HPA process was effective in mitigating a shift of threshold voltage ( \Delta \text{V}-{T}) during the CVS. These are attributed to the effective passivation of oxide traps in the high- k dielectric layer and interfacial traps, after HPA process in the H2 ambient.

Original languageEnglish
Article number7114237
Pages (from-to)672-674
Number of pages3
JournalIEEE Electron Device Letters
Volume36
Issue number7
DOIs
StatePublished - 1 Jul 2015

Keywords

  • atomic layer deposition (ALD)
  • high-pressure annealing
  • In0.53Ga0.47As MOSFET
  • interfacial trap density (Dit)
  • subthreshold-swing (SS)

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