Impact of H2 High-Pressure Annealing onto InGaAs Quantum-Well Metal-Oxide-Semiconductor Field-Effect Transistors with Al2O3/HfO2 Gate-Stack
Tae Woo Kim, Hyuk Min Kwon, Seung Heon Shin, Chan Soo Shin, Won Kyu Park, Eddie Chiu, Manny Rivera, Jae Ik Lew, Dmitry Veksler, Tommaso Orzali, Dae Hyun Kim
Research output: Contribution to journal › Article › peer-review
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