@inproceedings{ad0a8f9c830342728d99f3e725f408d9,
title = "Impact of Non-ideal Reliability Characteristics of SiOx p-Bit for Complex Optimization Problem Solver",
abstract = "SiOx threshold switching (TS) devices generate periodic output voltage (Vout) spikes for a given input voltage (Vin) pulse. By introducing Ti scavenging layers to induce a variability component in the SiOx film, the number of spikes corresponding to the probability begins to be elaborately tuned in a sigmoid manner as a function of Vin amplitude. Thus, Ti/SiOx/Ti TS device can serve as probabilistic bit (p-Bit), which play an important role in solving complex optimization problems (COPs). We investigate the impact of the non-ideal SiOxp-Bit response on the COP by considering classified scenarios based on the measurement results.",
keywords = "Combinatorial optimization problem, Logic gate, Probabilistic bits, Simulated annealing",
author = "Jihyun Kim and Hyeonsik Choi and Jiyong Woo",
note = "Publisher Copyright: {\textcopyright} 2025 IEEE.; 2025 IEEE International Reliability Physics Symposium, IRPS 2025 ; Conference date: 30-03-2025 Through 03-04-2025",
year = "2025",
doi = "10.1109/IRPS48204.2025.10983490",
language = "English",
series = "IEEE International Reliability Physics Symposium Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2025 IEEE International Reliability Physics Symposium, IRPS 2025 - Proceedings",
address = "United States",
}