Impact of Output Conductance on Current-Gain Cut-Off Frequency in InxGa1-xAs/In0.52Al0.48As Quantum-Well High-Electron-Mobility Transistors on InP Substrate

Hyo Jin Kim; In Geun Lee; Hyeon Bhin Jo; Tae Beom Rho; Takuya Tsutsumi; Hiroki Sugiyama; Hideaki Matsuzaki; Jae Hak Lee; Tae Woo Kim; Dae Hyun Kim

doi:10.3390/electronics12020259

Impact of Output Conductance on Current-Gain Cut-Off Frequency in In_xGa_1-xAs/In_0.52Al_0.48As Quantum-Well High-Electron-Mobility Transistors on InP Substrate

Hyo Jin Kim, In Geun Lee, Hyeon Bhin Jo, Tae Beom Rho, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki, Jae Hak Lee, Tae Woo Kim, Dae Hyun Kim

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Abstract

In this study, we investigated the impact of intrinsic output conductance (g_oi) on the short-circuit current-gain cut-off frequency (f_T) in In_xGa_1-xAs/In_0.52Al_0.48As quantum-well (QW) high-electron-mobility transistors. At its core, we attempted to extract values of f_T using a simplified small-signal model (SSM) of the HEMTs and to derive an analytical formula for f_T in terms of extrinsic model parameters that are related with intrinsic model parameters of a general SSM. We projected how f_T was influenced by g_oi in HEMTs, emphasizing that the improvement in electrostatic integrity would also be of critical importance to fully benefit from scaling down L_g.

Original language	English
Article number	259
Journal	Electronics (Switzerland)
Volume	12
Issue number	2
DOIs	https://doi.org/10.3390/electronics12020259
State	Published - Jan 2023

Keywords

cut-off frequency (f)
high-electron-mobility transistor (HEMT)
output conductance (g)
small-signal model (SSM)

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10.3390/electronics12020259

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Kim, H. J., Lee, I. G., Jo, H. B., Rho, T. B., Tsutsumi, T., Sugiyama, H., Matsuzaki, H., Lee, J. H., Kim, T. W., & Kim, D. H. (2023). Impact of Output Conductance on Current-Gain Cut-Off Frequency in In_xGa_1-xAs/In_0.52Al_0.48As Quantum-Well High-Electron-Mobility Transistors on InP Substrate. Electronics (Switzerland), 12(2), Article 259. https://doi.org/10.3390/electronics12020259

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title = "Impact of Output Conductance on Current-Gain Cut-Off Frequency in InxGa1-xAs/In0.52Al0.48As Quantum-Well High-Electron-Mobility Transistors on InP Substrate",

abstract = "In this study, we investigated the impact of intrinsic output conductance (goi) on the short-circuit current-gain cut-off frequency (fT) in InxGa1-xAs/In0.52Al0.48As quantum-well (QW) high-electron-mobility transistors. At its core, we attempted to extract values of fT using a simplified small-signal model (SSM) of the HEMTs and to derive an analytical formula for fT in terms of extrinsic model parameters that are related with intrinsic model parameters of a general SSM. We projected how fT was influenced by goi in HEMTs, emphasizing that the improvement in electrostatic integrity would also be of critical importance to fully benefit from scaling down Lg.",

keywords = "cut-off frequency (f), high-electron-mobility transistor (HEMT), output conductance (g), small-signal model (SSM)",

author = "Kim, \{Hyo Jin\} and Lee, \{In Geun\} and Jo, \{Hyeon Bhin\} and Rho, \{Tae Beom\} and Takuya Tsutsumi and Hiroki Sugiyama and Hideaki Matsuzaki and Lee, \{Jae Hak\} and Kim, \{Tae Woo\} and Kim, \{Dae Hyun\}",

note = "Publisher Copyright: {\textcopyright} 2023 by the authors.",

year = "2023",

month = jan,

doi = "10.3390/electronics12020259",

language = "English",

volume = "12",

journal = "Electronics (Switzerland)",

issn = "2079-9292",

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T1 - Impact of Output Conductance on Current-Gain Cut-Off Frequency in InxGa1-xAs/In0.52Al0.48As Quantum-Well High-Electron-Mobility Transistors on InP Substrate

AU - Kim, Hyo Jin

AU - Lee, In Geun

AU - Jo, Hyeon Bhin

AU - Rho, Tae Beom

AU - Tsutsumi, Takuya

AU - Sugiyama, Hiroki

AU - Matsuzaki, Hideaki

AU - Lee, Jae Hak

AU - Kim, Tae Woo

AU - Kim, Dae Hyun

PY - 2023/1

Y1 - 2023/1

N2 - In this study, we investigated the impact of intrinsic output conductance (goi) on the short-circuit current-gain cut-off frequency (fT) in InxGa1-xAs/In0.52Al0.48As quantum-well (QW) high-electron-mobility transistors. At its core, we attempted to extract values of fT using a simplified small-signal model (SSM) of the HEMTs and to derive an analytical formula for fT in terms of extrinsic model parameters that are related with intrinsic model parameters of a general SSM. We projected how fT was influenced by goi in HEMTs, emphasizing that the improvement in electrostatic integrity would also be of critical importance to fully benefit from scaling down Lg.

AB - In this study, we investigated the impact of intrinsic output conductance (goi) on the short-circuit current-gain cut-off frequency (fT) in InxGa1-xAs/In0.52Al0.48As quantum-well (QW) high-electron-mobility transistors. At its core, we attempted to extract values of fT using a simplified small-signal model (SSM) of the HEMTs and to derive an analytical formula for fT in terms of extrinsic model parameters that are related with intrinsic model parameters of a general SSM. We projected how fT was influenced by goi in HEMTs, emphasizing that the improvement in electrostatic integrity would also be of critical importance to fully benefit from scaling down Lg.

KW - cut-off frequency (f)

KW - high-electron-mobility transistor (HEMT)

KW - output conductance (g)

KW - small-signal model (SSM)

UR - https://www.scopus.com/pages/publications/85146773191

U2 - 10.3390/electronics12020259

DO - 10.3390/electronics12020259

M3 - Article

AN - SCOPUS:85146773191

SN - 2079-9292

VL - 12

JO - Electronics (Switzerland)

JF - Electronics (Switzerland)

IS - 2

M1 - 259

ER -

Impact of Output Conductance on Current-Gain Cut-Off Frequency in In_xGa_1-xAs/In_0.52Al_0.48As Quantum-Well High-Electron-Mobility Transistors on InP Substrate

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