Impact of the source-to-drain spacing on the DC and RF characteristics of InGaAs/InAlAs high-electron mobility transistors
- Do Young Yun
- , Hyeon Bhin Jo
- , Seung Woo Son
- , Ji Min Baek
- , Jung Hee Lee
- , Tae Woo Kim
- , Dae Hyun Kim
- , Takuya Tsutsumi
- , Hiroki Sugiyama
- , Hideaki Matsuzaki
- Kyungpook National University
- University of Ulsan
- Nippon Telegraph & Telephone
Research output: Contribution to journal › Article › peer-review
23
Scopus
citations