Importance of Solvent Evaporation Temperature in Pre-Annealing Stage for Solution-Processed Zinc Tin Oxide Thin-Film Transistors

Sang Hwa Jeon; Ziyuan Wang; Kyeong Ho Seo; Junhao Feng; Xue Zhang; Jaehoon Park; Jin Hyuk Bae

doi:10.3390/electronics11182822

Importance of Solvent Evaporation Temperature in Pre-Annealing Stage for Solution-Processed Zinc Tin Oxide Thin-Film Transistors

Sang Hwa Jeon, Ziyuan Wang, Kyeong Ho Seo, Junhao Feng, Xue Zhang, Jaehoon Park, Jin Hyuk Bae

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We focused on the importance of solvent evaporation governed by the temperature of the pre-annealing stage (T_S) in solution-processed zinc tin oxide (ZTO) thin-film transistors (TFTs). We controlled T_S based on the boiling point (B_P) of the solvent used. When T_S reaches the B_P, the field effect mobility is found to be about 1.03 cm2/V s, which is 10 times larger than the T_S < B_p case (0.13 cm²/V s). The reason is presumed to be that residual organic defects are effectively removed as T_S increases. In addition, when Ts is beyond Bp, the mobility is rather decreased due to structural defects such as pores and pinholes. Based on our results, it is noted that T_S plays a significant role in the enhancement of electrical performance and stability of solution-processed ZTO TFTs.

Original language	English
Article number	2822
Journal	Electronics (Switzerland)
Volume	11
Issue number	18
DOIs	https://doi.org/10.3390/electronics11182822
State	Published - Sep 2022

Keywords

amorphous oxide semiconductors
pre-annealing
solution process
thin-film transistor
zinc tin oxide

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10.3390/electronics11182822

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title = "Importance of Solvent Evaporation Temperature in Pre-Annealing Stage for Solution-Processed Zinc Tin Oxide Thin-Film Transistors",

abstract = "We focused on the importance of solvent evaporation governed by the temperature of the pre-annealing stage (TS) in solution-processed zinc tin oxide (ZTO) thin-film transistors (TFTs). We controlled TS based on the boiling point (BP) of the solvent used. When TS reaches the BP, the field effect mobility is found to be about 1.03 cm2/V s, which is 10 times larger than the TS < Bp case (0.13 cm2/V s). The reason is presumed to be that residual organic defects are effectively removed as TS increases. In addition, when Ts is beyond Bp, the mobility is rather decreased due to structural defects such as pores and pinholes. Based on our results, it is noted that TS plays a significant role in the enhancement of electrical performance and stability of solution-processed ZTO TFTs.",

keywords = "amorphous oxide semiconductors, pre-annealing, solution process, thin-film transistor, zinc tin oxide",

author = "Jeon, {Sang Hwa} and Ziyuan Wang and Seo, {Kyeong Ho} and Junhao Feng and Xue Zhang and Jaehoon Park and Bae, {Jin Hyuk}",

note = "Publisher Copyright: {\textcopyright} 2022 by the authors.",

year = "2022",

month = sep,

doi = "10.3390/electronics11182822",

language = "English",

volume = "11",

journal = "Electronics (Switzerland)",

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T1 - Importance of Solvent Evaporation Temperature in Pre-Annealing Stage for Solution-Processed Zinc Tin Oxide Thin-Film Transistors

AU - Jeon, Sang Hwa

AU - Wang, Ziyuan

AU - Seo, Kyeong Ho

AU - Feng, Junhao

AU - Zhang, Xue

AU - Park, Jaehoon

AU - Bae, Jin Hyuk

PY - 2022/9

Y1 - 2022/9

N2 - We focused on the importance of solvent evaporation governed by the temperature of the pre-annealing stage (TS) in solution-processed zinc tin oxide (ZTO) thin-film transistors (TFTs). We controlled TS based on the boiling point (BP) of the solvent used. When TS reaches the BP, the field effect mobility is found to be about 1.03 cm2/V s, which is 10 times larger than the TS < Bp case (0.13 cm2/V s). The reason is presumed to be that residual organic defects are effectively removed as TS increases. In addition, when Ts is beyond Bp, the mobility is rather decreased due to structural defects such as pores and pinholes. Based on our results, it is noted that TS plays a significant role in the enhancement of electrical performance and stability of solution-processed ZTO TFTs.

AB - We focused on the importance of solvent evaporation governed by the temperature of the pre-annealing stage (TS) in solution-processed zinc tin oxide (ZTO) thin-film transistors (TFTs). We controlled TS based on the boiling point (BP) of the solvent used. When TS reaches the BP, the field effect mobility is found to be about 1.03 cm2/V s, which is 10 times larger than the TS < Bp case (0.13 cm2/V s). The reason is presumed to be that residual organic defects are effectively removed as TS increases. In addition, when Ts is beyond Bp, the mobility is rather decreased due to structural defects such as pores and pinholes. Based on our results, it is noted that TS plays a significant role in the enhancement of electrical performance and stability of solution-processed ZTO TFTs.

KW - amorphous oxide semiconductors

KW - pre-annealing

KW - solution process

KW - thin-film transistor

KW - zinc tin oxide

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U2 - 10.3390/electronics11182822

DO - 10.3390/electronics11182822

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VL - 11

JO - Electronics (Switzerland)

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ER -

Importance of Solvent Evaporation Temperature in Pre-Annealing Stage for Solution-Processed Zinc Tin Oxide Thin-Film Transistors

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