Improved Ferroelectric Switching in Sputtered HfZrOx Device Enabled by High Pressure Annealing

Jiyong Woo; Youngin Goh; Solyee Im; Jeong Hyeon Hwang; Yeriaron Kim; Jeong Hun Kim; Jong Pil Im; Sung Min Yoon; Seung Eon Moon; Sanghun Jeon

doi:10.1109/LED.2019.2959802

Improved Ferroelectric Switching in Sputtered HfZrO_x Device Enabled by High Pressure Annealing

Jiyong Woo, Youngin Goh, Solyee Im, Jeong Hyeon Hwang, Yeriaron Kim, Jeong Hun Kim, Jong Pil Im, Sung Min Yoon, Seung Eon Moon, Sanghun Jeon

School of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

HfZrO_x (HZO) materials exhibiting ferroelectricity in ultra-thin layers can be deposited in various ways. Specifically, in sputtered HZO layers, only weak ferroelectric switching with gradual transition and small remnant polarization ( text {P}_{text {r}} ) is demonstrated using conventional rapid thermal annealing at high temperatures of at least 750 °C. Here we show that rapidly transited ferroelectric switching with a larger 2 P_r of 24mu C/cm² is achieved by introducing a high pressure annealing (HPA) at even lower temperature of 550 °C. Our findings reveal that the HPA enhances the crystallinity of grains in the HZO, thereby enlarging the P_r and strengthening breakdown conditions. Through short pulse techniques, how interface and bulk region in the HZO are involved in the switching depending on the HPA is also investigated.

Original language	English
Article number	8933133
Pages (from-to)	232-235
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	41
Issue number	2
DOIs	https://doi.org/10.1109/LED.2019.2959802
State	Published - Feb 2020

Keywords

Ferroelectric switching
HfZrO
high pressure annealing

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10.1109/LED.2019.2959802

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title = "Improved Ferroelectric Switching in Sputtered HfZrOx Device Enabled by High Pressure Annealing",

abstract = "HfZrOx (HZO) materials exhibiting ferroelectricity in ultra-thin layers can be deposited in various ways. Specifically, in sputtered HZO layers, only weak ferroelectric switching with gradual transition and small remnant polarization ( text \{P\}\_\{text \{r\}\} ) is demonstrated using conventional rapid thermal annealing at high temperatures of at least 750 °C. Here we show that rapidly transited ferroelectric switching with a larger 2 Pr of 24mu C/cm2 is achieved by introducing a high pressure annealing (HPA) at even lower temperature of 550 °C. Our findings reveal that the HPA enhances the crystallinity of grains in the HZO, thereby enlarging the Pr and strengthening breakdown conditions. Through short pulse techniques, how interface and bulk region in the HZO are involved in the switching depending on the HPA is also investigated.",

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year = "2020",

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doi = "10.1109/LED.2019.2959802",

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T1 - Improved Ferroelectric Switching in Sputtered HfZrOx Device Enabled by High Pressure Annealing

AU - Woo, Jiyong

AU - Goh, Youngin

AU - Im, Solyee

AU - Hwang, Jeong Hyeon

AU - Kim, Yeriaron

AU - Kim, Jeong Hun

AU - Im, Jong Pil

AU - Yoon, Sung Min

AU - Moon, Seung Eon

AU - Jeon, Sanghun

PY - 2020/2

Y1 - 2020/2

N2 - HfZrOx (HZO) materials exhibiting ferroelectricity in ultra-thin layers can be deposited in various ways. Specifically, in sputtered HZO layers, only weak ferroelectric switching with gradual transition and small remnant polarization ( text {P}_{text {r}} ) is demonstrated using conventional rapid thermal annealing at high temperatures of at least 750 °C. Here we show that rapidly transited ferroelectric switching with a larger 2 Pr of 24mu C/cm2 is achieved by introducing a high pressure annealing (HPA) at even lower temperature of 550 °C. Our findings reveal that the HPA enhances the crystallinity of grains in the HZO, thereby enlarging the Pr and strengthening breakdown conditions. Through short pulse techniques, how interface and bulk region in the HZO are involved in the switching depending on the HPA is also investigated.

AB - HfZrOx (HZO) materials exhibiting ferroelectricity in ultra-thin layers can be deposited in various ways. Specifically, in sputtered HZO layers, only weak ferroelectric switching with gradual transition and small remnant polarization ( text {P}_{text {r}} ) is demonstrated using conventional rapid thermal annealing at high temperatures of at least 750 °C. Here we show that rapidly transited ferroelectric switching with a larger 2 Pr of 24mu C/cm2 is achieved by introducing a high pressure annealing (HPA) at even lower temperature of 550 °C. Our findings reveal that the HPA enhances the crystallinity of grains in the HZO, thereby enlarging the Pr and strengthening breakdown conditions. Through short pulse techniques, how interface and bulk region in the HZO are involved in the switching depending on the HPA is also investigated.

KW - Ferroelectric switching

KW - HfZrO

KW - high pressure annealing

UR - https://www.scopus.com/pages/publications/85078944464

U2 - 10.1109/LED.2019.2959802

DO - 10.1109/LED.2019.2959802

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SN - 0741-3106

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 2

M1 - 8933133

ER -

Improved Ferroelectric Switching in Sputtered HfZrO_x Device Enabled by High Pressure Annealing

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Keywords

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