Improved negative bias stress stability of sol-gel-processed Mg-doped In₂O₃ thin film transistors

We demonstrate sol-gel-processed Mg-doped In₂O₃ thin film transistors (TFTs) with high performance and improved stability. To improve the performance of indium oxide, which is unstable at a high negative threshold voltage, magnesium is used to suppress oxygen vacancy formation. As the Mg doping concentration increases, the oxygen deficiencies and OH impurities decrease, resulting in a positive shift in the threshold voltage and improved stability in negative bias stress environments. In this experiment, Mg-doped (0 to 2 wt%) indium oxide TFTs are fabricated. Indium oxide prepared from a synthesized solution of an indium nitrate hydrate precursor and 2-methoxyethanol has a mobility of 17.2 cm²/V s. In₂O₃ TFTs doped with 1 wt% Mg also show a high mobility of 11.02 cm²/V s and a noticeable-1.5 V threshold voltage shift under negative bias stress. Our results suggest that the sol-gel-processed Mg-doped In₂O₃ TFTs are a promising candidate for use in high-stability and high-performance applications in transparent devices.