Improved Pt/Au and W/Pt/Au Schottky contacts on n-type ZnO using ozone cleaning

K. Ip; B. P. Gila; A. H. Onstine; E. S. Lambers; Y. W. Heo; K. H. Baik; D. P. Norton; S. J. Pearton; S. Kim; J. R. Laroche; F. Ren

doi:10.1063/1.1764940

Improved Pt/Au and W/Pt/Au Schottky contacts on n-type ZnO using ozone cleaning

K. Ip, B. P. Gila, A. H. Onstine, E. S. Lambers, Y. W. Heo, K. H. Baik, D. P. Norton, S. J. Pearton, S. Kim, J. R. Laroche, F. Ren

University of Florida

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71 Scopus citations

Abstract

The improvement in rectifying characteristics of the schottky contacts after the UV ozone cleaning of the n-type ZnO surface prior to deposition of either e-beam Pt or sputtered W contacts, was analyzed. The schottky barrier height of Pt contacts was 0.75 eV, with a saturation current density of 6.2×10 _-6 A cm _-2and ideality factor of 1.5. It was observed postdeposition annealing at 700°C produces rectifying behavior with schottky barrier heights of 0.45 eV for control samples and 0.49 eV for those cleaned with ozone exposure. The results show that the improvement of rectifying properties of both the Pt and W contacts was related to removal of surface carbon contamination from ZnO.

Original language	English
Pages (from-to)	5133-5135
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	25
DOIs	https://doi.org/10.1063/1.1764940
State	Published - 21 Jun 2004

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title = "Improved Pt/Au and W/Pt/Au Schottky contacts on n-type ZnO using ozone cleaning",

abstract = "The improvement in rectifying characteristics of the schottky contacts after the UV ozone cleaning of the n-type ZnO surface prior to deposition of either e-beam Pt or sputtered W contacts, was analyzed. The schottky barrier height of Pt contacts was 0.75 eV, with a saturation current density of 6.2×10 -6 A cm -2and ideality factor of 1.5. It was observed postdeposition annealing at 700°C produces rectifying behavior with schottky barrier heights of 0.45 eV for control samples and 0.49 eV for those cleaned with ozone exposure. The results show that the improvement of rectifying properties of both the Pt and W contacts was related to removal of surface carbon contamination from ZnO.",

author = "K. Ip and Gila, {B. P.} and Onstine, {A. H.} and Lambers, {E. S.} and Heo, {Y. W.} and Baik, {K. H.} and Norton, {D. P.} and Pearton, {S. J.} and S. Kim and Laroche, {J. R.} and F. Ren",

year = "2004",

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doi = "10.1063/1.1764940",

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journal = "Applied Physics Letters",

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TY - JOUR

T1 - Improved Pt/Au and W/Pt/Au Schottky contacts on n-type ZnO using ozone cleaning

AU - Ip, K.

AU - Gila, B. P.

AU - Onstine, A. H.

AU - Lambers, E. S.

AU - Heo, Y. W.

AU - Baik, K. H.

AU - Norton, D. P.

AU - Pearton, S. J.

AU - Kim, S.

AU - Laroche, J. R.

AU - Ren, F.

PY - 2004/6/21

Y1 - 2004/6/21

N2 - The improvement in rectifying characteristics of the schottky contacts after the UV ozone cleaning of the n-type ZnO surface prior to deposition of either e-beam Pt or sputtered W contacts, was analyzed. The schottky barrier height of Pt contacts was 0.75 eV, with a saturation current density of 6.2×10 -6 A cm -2and ideality factor of 1.5. It was observed postdeposition annealing at 700°C produces rectifying behavior with schottky barrier heights of 0.45 eV for control samples and 0.49 eV for those cleaned with ozone exposure. The results show that the improvement of rectifying properties of both the Pt and W contacts was related to removal of surface carbon contamination from ZnO.

AB - The improvement in rectifying characteristics of the schottky contacts after the UV ozone cleaning of the n-type ZnO surface prior to deposition of either e-beam Pt or sputtered W contacts, was analyzed. The schottky barrier height of Pt contacts was 0.75 eV, with a saturation current density of 6.2×10 -6 A cm -2and ideality factor of 1.5. It was observed postdeposition annealing at 700°C produces rectifying behavior with schottky barrier heights of 0.45 eV for control samples and 0.49 eV for those cleaned with ozone exposure. The results show that the improvement of rectifying properties of both the Pt and W contacts was related to removal of surface carbon contamination from ZnO.

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U2 - 10.1063/1.1764940

DO - 10.1063/1.1764940

M3 - Article

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

ER -

Improved Pt/Au and W/Pt/Au Schottky contacts on n-type ZnO using ozone cleaning

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