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Improved reset breakdown strength in a HfOx-based resistive memory by introducing RuOx oxygen diffusion barrier

  • Jaesung Park
  • , Jiyong Woo
  • , Amit Prakash
  • , Sangheon Lee
  • , Seokjae Lim
  • , Hyunsang Hwang
  • Pohang University of Science and Technology

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

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