Improved switching variability and stability by activating a single conductive filament

Jubong Park; Seungjae Jung; Wootae Lee; Seonghyun Kim; Jungho Shin; Daeseok Lee; Jiyong Woo; Hyunsang Hwang

doi:10.1109/LED.2012.2188373

Improved switching variability and stability by activating a single conductive filament

Jubong Park
, Seungjae Jung
, Wootae Lee
, Seonghyun Kim
, Jungho Shin
, Daeseok Lee
, Jiyong Woo
, Hyunsang Hwang

School of Electronics Engineering

Gwangju Institute of Science and Technology

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Abstract

We successfully fabricated a single-filament-activated resistive memory having limited conductive filament (CF) source through a novel fabrication technique. The formation of a single filament was confirmed using conductive atomic force microscopy. Compared to conventional programmable metallization cell devices having an unlimited CF source, our single-filament device showed a significantly improved switching variability by minimizing the probability of randomly formed CFs. The elimination of unlimited CF sources changed the rate-limiting parameter that determines the retention and disturbance properties and improved thermal and electrical stability.

Original language	English
Article number	6174438
Pages (from-to)	646-648
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	33
Issue number	5
DOIs	https://doi.org/10.1109/LED.2012.2188373
State	Published - May 2012

Keywords

Resistive memory (ReRAM)
RRAM
Single filament
Stability
Uniformity
Variability

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10.1109/LED.2012.2188373

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title = "Improved switching variability and stability by activating a single conductive filament",

abstract = "We successfully fabricated a single-filament-activated resistive memory having limited conductive filament (CF) source through a novel fabrication technique. The formation of a single filament was confirmed using conductive atomic force microscopy. Compared to conventional programmable metallization cell devices having an unlimited CF source, our single-filament device showed a significantly improved switching variability by minimizing the probability of randomly formed CFs. The elimination of unlimited CF sources changed the rate-limiting parameter that determines the retention and disturbance properties and improved thermal and electrical stability.",

keywords = "Resistive memory (ReRAM), RRAM, Single filament, Stability, Uniformity, Variability",

author = "Jubong Park and Seungjae Jung and Wootae Lee and Seonghyun Kim and Jungho Shin and Daeseok Lee and Jiyong Woo and Hyunsang Hwang",

year = "2012",

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language = "English",

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AU - Park, Jubong

AU - Jung, Seungjae

AU - Lee, Wootae

AU - Kim, Seonghyun

AU - Shin, Jungho

AU - Lee, Daeseok

AU - Woo, Jiyong

AU - Hwang, Hyunsang

PY - 2012/5

Y1 - 2012/5

N2 - We successfully fabricated a single-filament-activated resistive memory having limited conductive filament (CF) source through a novel fabrication technique. The formation of a single filament was confirmed using conductive atomic force microscopy. Compared to conventional programmable metallization cell devices having an unlimited CF source, our single-filament device showed a significantly improved switching variability by minimizing the probability of randomly formed CFs. The elimination of unlimited CF sources changed the rate-limiting parameter that determines the retention and disturbance properties and improved thermal and electrical stability.

AB - We successfully fabricated a single-filament-activated resistive memory having limited conductive filament (CF) source through a novel fabrication technique. The formation of a single filament was confirmed using conductive atomic force microscopy. Compared to conventional programmable metallization cell devices having an unlimited CF source, our single-filament device showed a significantly improved switching variability by minimizing the probability of randomly formed CFs. The elimination of unlimited CF sources changed the rate-limiting parameter that determines the retention and disturbance properties and improved thermal and electrical stability.

KW - Resistive memory (ReRAM)

KW - RRAM

KW - Single filament

KW - Stability

KW - Uniformity

KW - Variability

UR - https://www.scopus.com/pages/publications/84860360880

U2 - 10.1109/LED.2012.2188373

DO - 10.1109/LED.2012.2188373

M3 - Article

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VL - 33

SP - 646

EP - 648

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 5

M1 - 6174438

ER -

Improved switching variability and stability by activating a single conductive filament

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Keywords

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