TY - JOUR
T1 - Improvement of address discharge characteristics using asymmetric variable-width scan waveform in ac plasma display panel
AU - Cho, Byung Gwon
AU - Tae, Heung Sik
AU - Chien, Sung Il
PY - 2003/8
Y1 - 2003/8
N2 - A new asymmetric variable-width scan waveform is proposed to improve the characteristics of an address discharge, including a reduced address time and increased dynamic voltage margin, based on the formative and statistical time lags of an address discharge in an ac-plasma display panel (ac-PDP). The new asymmetric variable-width scan waveform has a progressively increasing scan pulsewidth that is wider than the address pulsewidth, thereby enabling stable wall charge accumulation under short address pulsewidth conditions. When adopting this new scan waveform, the address pulsewidth was reduced from 3.0 to 1.4 μs and the address voltage lowered from 65 to 55 V without any misfiring problem at an address pulsewidth of 1.4 μs.
AB - A new asymmetric variable-width scan waveform is proposed to improve the characteristics of an address discharge, including a reduced address time and increased dynamic voltage margin, based on the formative and statistical time lags of an address discharge in an ac-plasma display panel (ac-PDP). The new asymmetric variable-width scan waveform has a progressively increasing scan pulsewidth that is wider than the address pulsewidth, thereby enabling stable wall charge accumulation under short address pulsewidth conditions. When adopting this new scan waveform, the address pulsewidth was reduced from 3.0 to 1.4 μs and the address voltage lowered from 65 to 55 V without any misfiring problem at an address pulsewidth of 1.4 μs.
KW - Address discharge characteristics
KW - Asymmetric variable-width scan waveform
KW - Dynamic voltage margin
KW - Plasma display panel
UR - http://www.scopus.com/inward/record.url?scp=0043028456&partnerID=8YFLogxK
U2 - 10.1109/TED.2003.813452
DO - 10.1109/TED.2003.813452
M3 - Article
AN - SCOPUS:0043028456
SN - 0018-9383
VL - 50
SP - 1758
EP - 1765
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 8
ER -