Improvement of the light extraction efficiency in n-ZnO:Ga/p-Si heterojunction light emitting diodes by a SiO2 current-blocking layer

Won Suk Han; Young Yi Kim; Bo Hyun Kong; Hyung Koun Cho; Jin Young Moon; Ho Seong Lee

doi:10.1143/JJAP.48.08HK03

Improvement of the light extraction efficiency in n-ZnO:Ga/p-Si heterojunction light emitting diodes by a SiO₂ current-blocking layer

Won Suk Han, Young Yi Kim, Bo Hyun Kong, Hyung Koun Cho, Jin Young Moon, Ho Seong Lee

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

We studied the role of a patterned SiO₂ current-blocking layer (CBL) on the output power in polycrystal n-type ZnO:Ga/p-Si heterojunction light emitting diodes (LEDs). The introduction of a CBL considerably improved the light extraction efficiency by about 200%, despite the increased series resistance. It suppressed the vertical current with a low extraction efficiency by opaque metals and allowed the spreading current component to be enhanced, in contrast to conventional n-ZnO/p-Si LEDs operated only a vertical current component due to the grain boundaries in the ZnO films. This result suggests that the use of CBL is profitable method in the emitter application using the film with the polycrystal structure.

Original language	English
Pages (from-to)	08HK031-08HK034
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	48
Issue number	8 Part 2
DOIs	https://doi.org/10.1143/JJAP.48.08HK03
State	Published - 2009

Access to Document

10.1143/JJAP.48.08HK03

Cite this

Han, W. S., Kim, Y. Y., Kong, B. H., Cho, H. K., Moon, J. Y., & Lee, H. S. (2009). Improvement of the light extraction efficiency in n-ZnO:Ga/p-Si heterojunction light emitting diodes by a SiO₂ current-blocking layer. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 48(8 Part 2), 08HK031-08HK034. https://doi.org/10.1143/JJAP.48.08HK03

@article{73db0e31233b45e0bd64e29b6e13f48a,

title = "Improvement of the light extraction efficiency in n-ZnO:Ga/p-Si heterojunction light emitting diodes by a SiO2 current-blocking layer",

abstract = "We studied the role of a patterned SiO2 current-blocking layer (CBL) on the output power in polycrystal n-type ZnO:Ga/p-Si heterojunction light emitting diodes (LEDs). The introduction of a CBL considerably improved the light extraction efficiency by about 200%, despite the increased series resistance. It suppressed the vertical current with a low extraction efficiency by opaque metals and allowed the spreading current component to be enhanced, in contrast to conventional n-ZnO/p-Si LEDs operated only a vertical current component due to the grain boundaries in the ZnO films. This result suggests that the use of CBL is profitable method in the emitter application using the film with the polycrystal structure.",

author = "Han, {Won Suk} and Kim, {Young Yi} and Kong, {Bo Hyun} and Cho, {Hyung Koun} and Moon, {Jin Young} and Lee, {Ho Seong}",

year = "2009",

doi = "10.1143/JJAP.48.08HK03",

language = "English",

volume = "48",

pages = "08HK031--08HK034",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "8 Part 2",

}

Han, WS, Kim, YY, Kong, BH, Cho, HK, Moon, JY & Lee, HS 2009, 'Improvement of the light extraction efficiency in n-ZnO:Ga/p-Si heterojunction light emitting diodes by a SiO₂ current-blocking layer', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 48, no. 8 Part 2, pp. 08HK031-08HK034. https://doi.org/10.1143/JJAP.48.08HK03

Improvement of the light extraction efficiency in n-ZnO:Ga/p-Si heterojunction light emitting diodes by a SiO₂ current-blocking layer. / Han, Won Suk; Kim, Young Yi; Kong, Bo Hyun et al.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 48, No. 8 Part 2, 2009, p. 08HK031-08HK034.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Improvement of the light extraction efficiency in n-ZnO:Ga/p-Si heterojunction light emitting diodes by a SiO2 current-blocking layer

AU - Han, Won Suk

AU - Kim, Young Yi

AU - Kong, Bo Hyun

AU - Cho, Hyung Koun

AU - Moon, Jin Young

AU - Lee, Ho Seong

PY - 2009

Y1 - 2009

N2 - We studied the role of a patterned SiO2 current-blocking layer (CBL) on the output power in polycrystal n-type ZnO:Ga/p-Si heterojunction light emitting diodes (LEDs). The introduction of a CBL considerably improved the light extraction efficiency by about 200%, despite the increased series resistance. It suppressed the vertical current with a low extraction efficiency by opaque metals and allowed the spreading current component to be enhanced, in contrast to conventional n-ZnO/p-Si LEDs operated only a vertical current component due to the grain boundaries in the ZnO films. This result suggests that the use of CBL is profitable method in the emitter application using the film with the polycrystal structure.

AB - We studied the role of a patterned SiO2 current-blocking layer (CBL) on the output power in polycrystal n-type ZnO:Ga/p-Si heterojunction light emitting diodes (LEDs). The introduction of a CBL considerably improved the light extraction efficiency by about 200%, despite the increased series resistance. It suppressed the vertical current with a low extraction efficiency by opaque metals and allowed the spreading current component to be enhanced, in contrast to conventional n-ZnO/p-Si LEDs operated only a vertical current component due to the grain boundaries in the ZnO films. This result suggests that the use of CBL is profitable method in the emitter application using the film with the polycrystal structure.

UR - http://www.scopus.com/inward/record.url?scp=77952685473&partnerID=8YFLogxK

U2 - 10.1143/JJAP.48.08HK03

DO - 10.1143/JJAP.48.08HK03

M3 - Article

AN - SCOPUS:77952685473

SN - 0021-4922

VL - 48

SP - 08HK031-08HK034

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 8 Part 2

ER -

Improvement of the light extraction efficiency in n-ZnO:Ga/p-Si heterojunction light emitting diodes by a SiO₂ current-blocking layer

Abstract

Access to Document

Other files and links

Fingerprint

Cite this