Improving Ni/GaN Schottky diode performance through interfacial passivation layer formed via ultraviolet/ozone treatment

Engineering

• Oxide Layer 100%
• Passivation Layer 100%
• Passivation 66%
• Energy Surface 33%
• Determines 33%
• Schottky Barrier 33%
• Barrier Height 33%
• Defects 33%
• Atomic Force Microscopy 33%
• Ray Photoelectron Spectroscopy 33%
• Semiconductor Device 33%
• Breakdown Voltage 33%
• Surface Oxide 33%
• Metal-Semiconductor Junction 33%

Material Science

• Schottky Diode 100%
• Oxide Compound 40%
• Semiconductor Device 20%
• Surface Energy 20%
• Oxide Surface 20%
• Schottky Barrier 20%
• X-Ray Photoelectron Spectroscopy 20%
• Atomic Force Microscopy 20%
• Contact Angle 20%
• Surface Roughness 20%