Improving the Nonvolatile Memory Characteristics of Sol–Gel-Processed Y₂O₃ RRAM Devices Using Mono-Ethanolamine Additives

In this study, Y₂O₃-based resistive random-access memory (RRAM) devices with a mono-ethanolamine (MEA) stabilizer fabricated using the sol–gel process on indium tin oxide/glass substrates were investigated. The effects of MEA content on the structural, optical, chemical, and electrical characteristics were determined. As the MEA content increased, film thickness and crystallite size decreased. In particular, the increase in MEA content slightly decreased the oxygen vacancy concentration. The decreased film thickness decreased the physical distance for conductive filament formation, generating a strong electric field. However, owing to the lowest oxygen vacancy concentration, a large electrical field is required. To ensure data reliability, the endurance cycles across several devices were measured and presented statistically. Additionally, endurance performance improved with the increase in MEA content. Reduced oxygen vacancy concentration can successfully suppress the excess formation of the Ag conductive filament. This simplifies the transition from the high- to the low-resistance state and vice versa, thereby improving the endurance cycles of the RRAM devices.