Abstract
The in-plane thermal conductivity is measured to be three times lower in misfit-layered [(PbSe)0.99] x (WSe2) x superlattice thin films than disordered-layered WSe2 because of interface scattering despite a higher cross-plane value in the former than the latter. While having little effect on the in-plane thermal conductivity, annealing the p-type [(PbSe)0.99] 2 (WSe2) 2 films in Se increases the in-plane Seebeck coefficient and electrical conductivity because of decreased defect and hole concentrations. Increasing interface density of the annealed films by decreasing x from 4 to 2 has weak influence on the in-plane thermal conductivity but increases the Seebeck coefficient and decreases the room-temperature electrical conductivity.
Original language | English |
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Article number | 181908 |
Journal | Applied Physics Letters |
Volume | 96 |
Issue number | 18 |
DOIs | |
State | Published - 2010 |