In-plane thermal and thermoelectric properties of misfit-layered [(PbSe) 0.99] x (WSe2) x superlattice thin films

Anastassios Mavrokefalos, Qiyin Lin, Matthew Beekman, Jae Hun Seol, Yong J. Lee, Huijun Kong, Michael T. Pettes, David C. Johnson, Li Shi

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Abstract

The in-plane thermal conductivity is measured to be three times lower in misfit-layered [(PbSe)0.99] x (WSe2) x superlattice thin films than disordered-layered WSe2 because of interface scattering despite a higher cross-plane value in the former than the latter. While having little effect on the in-plane thermal conductivity, annealing the p-type [(PbSe)0.99] 2 (WSe2) 2 films in Se increases the in-plane Seebeck coefficient and electrical conductivity because of decreased defect and hole concentrations. Increasing interface density of the annealed films by decreasing x from 4 to 2 has weak influence on the in-plane thermal conductivity but increases the Seebeck coefficient and decreases the room-temperature electrical conductivity.

Original languageEnglish
Article number181908
JournalApplied Physics Letters
Volume96
Issue number18
DOIs
StatePublished - 2010

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