In-plane thermal and thermoelectric properties of misfit-layered [(PbSe) 0.99] x (WSe2) x superlattice thin films

Anastassios Mavrokefalos; Qiyin Lin; Matthew Beekman; Jae Hun Seol; Yong J. Lee; Huijun Kong; Michael T. Pettes; David C. Johnson; Li Shi

doi:10.1063/1.3428577

In-plane thermal and thermoelectric properties of misfit-layered [(PbSe) _0.99] _x (WSe₂) _x superlattice thin films

Anastassios Mavrokefalos
, Qiyin Lin
, Matthew Beekman
, Jae Hun Seol
, Yong J. Lee
, Huijun Kong
, Michael T. Pettes
, David C. Johnson
, Li Shi

Department of Smart Mobility Engineering

Research output: Contribution to journal › Article › peer-review

42 Scopus citations

Abstract

The in-plane thermal conductivity is measured to be three times lower in misfit-layered [(PbSe)_0.99] _x (WSe₂) _x superlattice thin films than disordered-layered WSe₂ because of interface scattering despite a higher cross-plane value in the former than the latter. While having little effect on the in-plane thermal conductivity, annealing the p-type [(PbSe)_0.99] ₂ (WSe₂) ₂ films in Se increases the in-plane Seebeck coefficient and electrical conductivity because of decreased defect and hole concentrations. Increasing interface density of the annealed films by decreasing x from 4 to 2 has weak influence on the in-plane thermal conductivity but increases the Seebeck coefficient and decreases the room-temperature electrical conductivity.

Original language	English
Article number	181908
Journal	Applied Physics Letters
Volume	96
Issue number	18
DOIs	https://doi.org/10.1063/1.3428577
State	Published - 2010

Access to Document

10.1063/1.3428577

Cite this

@article{e788e8d76059451ea35904b07942896b,

title = "In-plane thermal and thermoelectric properties of misfit-layered [(PbSe) 0.99] x (WSe2) x superlattice thin films",

abstract = "The in-plane thermal conductivity is measured to be three times lower in misfit-layered [(PbSe)0.99] x (WSe2) x superlattice thin films than disordered-layered WSe2 because of interface scattering despite a higher cross-plane value in the former than the latter. While having little effect on the in-plane thermal conductivity, annealing the p-type [(PbSe)0.99] 2 (WSe2) 2 films in Se increases the in-plane Seebeck coefficient and electrical conductivity because of decreased defect and hole concentrations. Increasing interface density of the annealed films by decreasing x from 4 to 2 has weak influence on the in-plane thermal conductivity but increases the Seebeck coefficient and decreases the room-temperature electrical conductivity.",

author = "Anastassios Mavrokefalos and Qiyin Lin and Matthew Beekman and Seol, \{Jae Hun\} and Lee, \{Yong J.\} and Huijun Kong and Pettes, \{Michael T.\} and Johnson, \{David C.\} and Li Shi",

year = "2010",

doi = "10.1063/1.3428577",

language = "English",

volume = "96",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "18",

}

TY - JOUR

T1 - In-plane thermal and thermoelectric properties of misfit-layered [(PbSe) 0.99] x (WSe2) x superlattice thin films

AU - Mavrokefalos, Anastassios

AU - Lin, Qiyin

AU - Beekman, Matthew

AU - Seol, Jae Hun

AU - Lee, Yong J.

AU - Kong, Huijun

AU - Pettes, Michael T.

AU - Johnson, David C.

AU - Shi, Li

PY - 2010

Y1 - 2010

N2 - The in-plane thermal conductivity is measured to be three times lower in misfit-layered [(PbSe)0.99] x (WSe2) x superlattice thin films than disordered-layered WSe2 because of interface scattering despite a higher cross-plane value in the former than the latter. While having little effect on the in-plane thermal conductivity, annealing the p-type [(PbSe)0.99] 2 (WSe2) 2 films in Se increases the in-plane Seebeck coefficient and electrical conductivity because of decreased defect and hole concentrations. Increasing interface density of the annealed films by decreasing x from 4 to 2 has weak influence on the in-plane thermal conductivity but increases the Seebeck coefficient and decreases the room-temperature electrical conductivity.

AB - The in-plane thermal conductivity is measured to be three times lower in misfit-layered [(PbSe)0.99] x (WSe2) x superlattice thin films than disordered-layered WSe2 because of interface scattering despite a higher cross-plane value in the former than the latter. While having little effect on the in-plane thermal conductivity, annealing the p-type [(PbSe)0.99] 2 (WSe2) 2 films in Se increases the in-plane Seebeck coefficient and electrical conductivity because of decreased defect and hole concentrations. Increasing interface density of the annealed films by decreasing x from 4 to 2 has weak influence on the in-plane thermal conductivity but increases the Seebeck coefficient and decreases the room-temperature electrical conductivity.

UR - https://www.scopus.com/pages/publications/77952808389

U2 - 10.1063/1.3428577

DO - 10.1063/1.3428577

M3 - Article

AN - SCOPUS:77952808389

SN - 0003-6951

VL - 96

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

M1 - 181908

ER -

In-plane thermal and thermoelectric properties of misfit-layered [(PbSe) _0.99] _x (WSe₂) _x superlattice thin films

Abstract

Access to Document

Other files and links

Fingerprint

Cite this