In-situ electrical resistance monitoring of vanadium oxide reduction

Yeongjun Son; Sehwan Song; Dooyong Lee; Seonghoon Han; Jisung Lee; Seyoung Kwon; Jinho Jeon; Jong Seong Bae; Hyun Ho Kim; Haeyong Kang; Sungkyun Park

doi:10.1016/j.jallcom.2025.180705

In-situ electrical resistance monitoring of vanadium oxide reduction

Yeongjun Son
, Sehwan Song
, Dooyong Lee
, Seonghoon Han
, Jisung Lee
, Seyoung Kwon
, Jinho Jeon
, Jong Seong Bae
, Hyun Ho Kim
, Haeyong Kang
, Sungkyun Park

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The reduction process of vanadium oxide was monitored by measuring its in-situ electrical resistance. V₂O₅ films deposited on c-Al₂O₃ were annealed in a hydrogen environment and exhibited a sharp decrease in resistance at ∼350 °C, followed by a slight increase at ∼460 °C. Subsequent analyses confirmed that the noticeable resistance changes during the annealing process could be attributed to the reduced vanadium oxidation states. These results indicate that the variations in the resistance of the vanadium oxide films are directly related to the changes in their oxidation states. Therefore, in-situ electrical measurements can provide insights into the changes in the chemical state of vanadium oxide.

Original language	English
Article number	180705
Journal	Journal of Alloys and Compounds
Volume	1029
DOIs	https://doi.org/10.1016/j.jallcom.2025.180705
State	Published - 20 May 2025

Keywords

Chemical state variation
Oxidation
Reduction
Vanadium oxides

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10.1016/j.jallcom.2025.180705

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title = "In-situ electrical resistance monitoring of vanadium oxide reduction",

abstract = "The reduction process of vanadium oxide was monitored by measuring its in-situ electrical resistance. V2O5 films deposited on c-Al2O3 were annealed in a hydrogen environment and exhibited a sharp decrease in resistance at ∼350 °C, followed by a slight increase at ∼460 °C. Subsequent analyses confirmed that the noticeable resistance changes during the annealing process could be attributed to the reduced vanadium oxidation states. These results indicate that the variations in the resistance of the vanadium oxide films are directly related to the changes in their oxidation states. Therefore, in-situ electrical measurements can provide insights into the changes in the chemical state of vanadium oxide.",

keywords = "Chemical state variation, Oxidation, Reduction, Vanadium oxides",

author = "Yeongjun Son and Sehwan Song and Dooyong Lee and Seonghoon Han and Jisung Lee and Seyoung Kwon and Jinho Jeon and Bae, \{Jong Seong\} and Kim, \{Hyun Ho\} and Haeyong Kang and Sungkyun Park",

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year = "2025",

month = may,

day = "20",

doi = "10.1016/j.jallcom.2025.180705",

language = "English",

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journal = "Journal of Alloys and Compounds",

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publisher = "Elsevier B.V.",

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TY - JOUR

T1 - In-situ electrical resistance monitoring of vanadium oxide reduction

AU - Son, Yeongjun

AU - Song, Sehwan

AU - Lee, Dooyong

AU - Han, Seonghoon

AU - Lee, Jisung

AU - Kwon, Seyoung

AU - Jeon, Jinho

AU - Bae, Jong Seong

AU - Kim, Hyun Ho

AU - Kang, Haeyong

AU - Park, Sungkyun

PY - 2025/5/20

Y1 - 2025/5/20

N2 - The reduction process of vanadium oxide was monitored by measuring its in-situ electrical resistance. V2O5 films deposited on c-Al2O3 were annealed in a hydrogen environment and exhibited a sharp decrease in resistance at ∼350 °C, followed by a slight increase at ∼460 °C. Subsequent analyses confirmed that the noticeable resistance changes during the annealing process could be attributed to the reduced vanadium oxidation states. These results indicate that the variations in the resistance of the vanadium oxide films are directly related to the changes in their oxidation states. Therefore, in-situ electrical measurements can provide insights into the changes in the chemical state of vanadium oxide.

AB - The reduction process of vanadium oxide was monitored by measuring its in-situ electrical resistance. V2O5 films deposited on c-Al2O3 were annealed in a hydrogen environment and exhibited a sharp decrease in resistance at ∼350 °C, followed by a slight increase at ∼460 °C. Subsequent analyses confirmed that the noticeable resistance changes during the annealing process could be attributed to the reduced vanadium oxidation states. These results indicate that the variations in the resistance of the vanadium oxide films are directly related to the changes in their oxidation states. Therefore, in-situ electrical measurements can provide insights into the changes in the chemical state of vanadium oxide.

KW - Chemical state variation

KW - Oxidation

KW - Reduction

KW - Vanadium oxides

UR - https://www.scopus.com/pages/publications/105004645551

U2 - 10.1016/j.jallcom.2025.180705

DO - 10.1016/j.jallcom.2025.180705

M3 - Article

AN - SCOPUS:105004645551

SN - 0925-8388

VL - 1029

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

M1 - 180705

ER -

In-situ electrical resistance monitoring of vanadium oxide reduction

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Keywords

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