InAs/GaAs quantum dot infrared photodetector on a Si substrate by means of metal wafer bonding and epitaxial lift-off

Ho Sung Kim; Seung Yeop Ahn; Sang Hyeon Kim; Geun Hwan Ryu; Ji Hoon Kyhm; Kyung Woon Lee; Jung Ho Park; Won Jun Choi

doi:10.1364/OE.25.017562

InAs/GaAs quantum dot infrared photodetector on a Si substrate by means of metal wafer bonding and epitaxial lift-off

Ho Sung Kim, Seung Yeop Ahn, Sang Hyeon Kim, Geun Hwan Ryu, Ji Hoon Kyhm, Kyung Woon Lee, Jung Ho Park, Won Jun Choi

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Abstract

We report the fabrication of quantum dot infrared photodetectors (QDIPs) on silicon (Si) substrates by means of metal wafer bonding and an epitaxial lift-off process. According to the photoluminescence (PL) and x-ray diffraction measurements, the QDIP layer was transferred onto the Si substrate without degradation of the crystal quality or residual strain. In addition, from the PL results, we found that an optical cavity was formed because Pt/Au of the bonding material was served as the back mirror and the facet of the GaAs/air was served as the front mirror. The device performance capabilities were directly compared and peak responsivity was enhanced by nearly twofold from 0.038 A/W to 0.067 A/W.

Original language	English
Pages (from-to)	17562-17570
Number of pages	9
Journal	Optics Express
Volume	25
Issue number	15
DOIs	https://doi.org/10.1364/OE.25.017562
State	Published - 24 Jul 2017

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title = "InAs/GaAs quantum dot infrared photodetector on a Si substrate by means of metal wafer bonding and epitaxial lift-off",

abstract = "We report the fabrication of quantum dot infrared photodetectors (QDIPs) on silicon (Si) substrates by means of metal wafer bonding and an epitaxial lift-off process. According to the photoluminescence (PL) and x-ray diffraction measurements, the QDIP layer was transferred onto the Si substrate without degradation of the crystal quality or residual strain. In addition, from the PL results, we found that an optical cavity was formed because Pt/Au of the bonding material was served as the back mirror and the facet of the GaAs/air was served as the front mirror. The device performance capabilities were directly compared and peak responsivity was enhanced by nearly twofold from 0.038 A/W to 0.067 A/W.",

author = "Kim, {Ho Sung} and Ahn, {Seung Yeop} and Kim, {Sang Hyeon} and Ryu, {Geun Hwan} and Kyhm, {Ji Hoon} and Lee, {Kyung Woon} and Park, {Jung Ho} and Choi, {Won Jun}",

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doi = "10.1364/OE.25.017562",

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T1 - InAs/GaAs quantum dot infrared photodetector on a Si substrate by means of metal wafer bonding and epitaxial lift-off

AU - Kim, Ho Sung

AU - Ahn, Seung Yeop

AU - Kim, Sang Hyeon

AU - Ryu, Geun Hwan

AU - Kyhm, Ji Hoon

AU - Lee, Kyung Woon

AU - Park, Jung Ho

AU - Choi, Won Jun

PY - 2017/7/24

Y1 - 2017/7/24

N2 - We report the fabrication of quantum dot infrared photodetectors (QDIPs) on silicon (Si) substrates by means of metal wafer bonding and an epitaxial lift-off process. According to the photoluminescence (PL) and x-ray diffraction measurements, the QDIP layer was transferred onto the Si substrate without degradation of the crystal quality or residual strain. In addition, from the PL results, we found that an optical cavity was formed because Pt/Au of the bonding material was served as the back mirror and the facet of the GaAs/air was served as the front mirror. The device performance capabilities were directly compared and peak responsivity was enhanced by nearly twofold from 0.038 A/W to 0.067 A/W.

AB - We report the fabrication of quantum dot infrared photodetectors (QDIPs) on silicon (Si) substrates by means of metal wafer bonding and an epitaxial lift-off process. According to the photoluminescence (PL) and x-ray diffraction measurements, the QDIP layer was transferred onto the Si substrate without degradation of the crystal quality or residual strain. In addition, from the PL results, we found that an optical cavity was formed because Pt/Au of the bonding material was served as the back mirror and the facet of the GaAs/air was served as the front mirror. The device performance capabilities were directly compared and peak responsivity was enhanced by nearly twofold from 0.038 A/W to 0.067 A/W.

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SN - 1094-4087

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EP - 17570

JO - Optics Express

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ER -

InAs/GaAs quantum dot infrared photodetector on a Si substrate by means of metal wafer bonding and epitaxial lift-off

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