Abstract
Thin-film transistors (TFTs) were fabricated using an indium oxide (In 2O3 thin film as the n-channel active layer by RF sputtering at room temperature. The TFTs showed a thickness-dependent performance in the range of 488 nm, which is ascribed to the total carrier number in the active layer. Optimum device performance at 8-nm-thick In 2O3 TFTs had a field-effect mobility of 15.3 cm 2ċV-1ċs-1, a threshold voltage of 3.1 V, an onoff current ratio of 2.2 × 108, a subthreshold gate voltage swing of 0.25 V̇ decade-1, and, most importantly, a normally off characteristic. These results suggest that sputter-deposited In2O3 is a promising candidate for high-performance TFTs for transparent and flexible electronics.
Original language | English |
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Article number | 5451159 |
Pages (from-to) | 567-569 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 31 |
Issue number | 6 |
DOIs | |
State | Published - Jun 2010 |
Keywords
- Indium oxide
- Thin films
- Thin-film transistors (TFTs)