Indium oxide thin-film transistors fabricated by room temperature rf-magnetron sputtering

J. H. Noh; S. Y. Ryu; C. S. Kim; S. J. Jo; H. S. Hwang; H. K. Baik

Indium oxide thin-film transistors fabricated by room temperature rf-magnetron sputtering

J. H. Noh, S. Y. Ryu, C. S. Kim, S. J. Jo, H. S. Hwang, H. K. Baik

Yonsei University

Research output: Contribution to conference › Paper › peer-review

2 Scopus citations

Abstract

We have fabricated a bottom-gate In₂O₃ TFT with high mobility using rf magnetron sputtering at room temperature. Device shows an average field effect mobility of 12.3 Cm²V¹s^-1, and sharp on-fo-off transition with about 7 orders of magnitude. Adopting our bottom-gate In₂O₃ TFT, a load-resistance inverter was set up and good dynamic operation has been demonstrated.

Original language	English
Pages	1999-2000
Number of pages	2
State	Published - 2007
Event	14th International Display Workshops, IDW '07 - Sapporo, Japan Duration: 5 Dec 2007 → 5 Dec 2007

Conference

Conference	14th International Display Workshops, IDW '07
Country/Territory	Japan
City	Sapporo
Period	5/12/07 → 5/12/07

Cite this

@conference{5c90d7bb407848bfadad94a307c10b7a,

title = "Indium oxide thin-film transistors fabricated by room temperature rf-magnetron sputtering",

abstract = "We have fabricated a bottom-gate In2O3 TFT with high mobility using rf magnetron sputtering at room temperature. Device shows an average field effect mobility of 12.3 Cm2V1s-1, and sharp on-fo-off transition with about 7 orders of magnitude. Adopting our bottom-gate In2O3 TFT, a load-resistance inverter was set up and good dynamic operation has been demonstrated.",

author = "Noh, {J. H.} and Ryu, {S. Y.} and Kim, {C. S.} and Jo, {S. J.} and Hwang, {H. S.} and Baik, {H. K.}",

year = "2007",

language = "English",

pages = "1999--2000",

note = "14th International Display Workshops, IDW '07 ; Conference date: 05-12-2007 Through 05-12-2007",

}

TY - CONF

T1 - Indium oxide thin-film transistors fabricated by room temperature rf-magnetron sputtering

AU - Noh, J. H.

AU - Ryu, S. Y.

AU - Kim, C. S.

AU - Jo, S. J.

AU - Hwang, H. S.

AU - Baik, H. K.

PY - 2007

Y1 - 2007

N2 - We have fabricated a bottom-gate In2O3 TFT with high mobility using rf magnetron sputtering at room temperature. Device shows an average field effect mobility of 12.3 Cm2V1s-1, and sharp on-fo-off transition with about 7 orders of magnitude. Adopting our bottom-gate In2O3 TFT, a load-resistance inverter was set up and good dynamic operation has been demonstrated.

AB - We have fabricated a bottom-gate In2O3 TFT with high mobility using rf magnetron sputtering at room temperature. Device shows an average field effect mobility of 12.3 Cm2V1s-1, and sharp on-fo-off transition with about 7 orders of magnitude. Adopting our bottom-gate In2O3 TFT, a load-resistance inverter was set up and good dynamic operation has been demonstrated.

UR - http://www.scopus.com/inward/record.url?scp=43349101013&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:43349101013

SP - 1999

EP - 2000

T2 - 14th International Display Workshops, IDW '07

Y2 - 5 December 2007 through 5 December 2007

ER -

Indium oxide thin-film transistors fabricated by room temperature rf-magnetron sputtering

Abstract

Conference

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