Influence of annealing temperature on the microstnictural and electrical characteristics of MgZnSnO channel layers for thin film transistors

Ho Beom Kim; Ho Seong Lee

doi:10.3365/kjmm.2014.52.12.1009

Influence of annealing temperature on the microstnictural and electrical characteristics of MgZnSnO channel layers for thin film transistors

Ho Beom Kim, Ho Seong Lee

Kyungpook National University

Research output: Contribution to journal › Article › peer-review

Abstract

Thin film transistors (TFTs) with Mg-doped ZnSnO (MZTO) channel layers were fabricated by a sol-gel process. The effect of annealing temperature on the electrical characteristics of bottom-gate MZTO TFTs was investigated. For the sample annealed at 400 °C, an amorphous phase was formed, while for the sample annealed at 600 °C, a nanocrystalline MZTO film was obtained. The electrical properties of MZTO TFTs were very sensitive to the annealing temperature. High temperature annealing caused the threshold voltage to shift toward a negative direction and decreased the field-effect mobility and on/off current ratio. The MZTO TFT annealed at 400 °C showed an appropriate threshold voltage, on/off current ratio, and field-effect mobility.

Original language	English
Pages (from-to)	1009-1015
Number of pages	7
Journal	Journal of Korean Institute of Metals and Materials
Volume	52
Issue number	12
DOIs	https://doi.org/10.3365/kjmm.2014.52.12.1009
State	Published - 1 Dec 2014

Keywords

Electrical properties
Microstructure
Oxides
Sol-gel
Transmission electron microscopy (TEM)

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title = "Influence of annealing temperature on the microstnictural and electrical characteristics of MgZnSnO channel layers for thin film transistors",

abstract = "Thin film transistors (TFTs) with Mg-doped ZnSnO (MZTO) channel layers were fabricated by a sol-gel process. The effect of annealing temperature on the electrical characteristics of bottom-gate MZTO TFTs was investigated. For the sample annealed at 400 °C, an amorphous phase was formed, while for the sample annealed at 600 °C, a nanocrystalline MZTO film was obtained. The electrical properties of MZTO TFTs were very sensitive to the annealing temperature. High temperature annealing caused the threshold voltage to shift toward a negative direction and decreased the field-effect mobility and on/off current ratio. The MZTO TFT annealed at 400 °C showed an appropriate threshold voltage, on/off current ratio, and field-effect mobility.",

keywords = "Electrical properties, Microstructure, Oxides, Sol-gel, Transmission electron microscopy (TEM)",

author = "Kim, {Ho Beom} and Lee, {Ho Seong}",

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T1 - Influence of annealing temperature on the microstnictural and electrical characteristics of MgZnSnO channel layers for thin film transistors

AU - Kim, Ho Beom

AU - Lee, Ho Seong

N1 - Publisher Copyright: © The Korean Institute of Metals and Materials.

PY - 2014/12/1

Y1 - 2014/12/1

N2 - Thin film transistors (TFTs) with Mg-doped ZnSnO (MZTO) channel layers were fabricated by a sol-gel process. The effect of annealing temperature on the electrical characteristics of bottom-gate MZTO TFTs was investigated. For the sample annealed at 400 °C, an amorphous phase was formed, while for the sample annealed at 600 °C, a nanocrystalline MZTO film was obtained. The electrical properties of MZTO TFTs were very sensitive to the annealing temperature. High temperature annealing caused the threshold voltage to shift toward a negative direction and decreased the field-effect mobility and on/off current ratio. The MZTO TFT annealed at 400 °C showed an appropriate threshold voltage, on/off current ratio, and field-effect mobility.

AB - Thin film transistors (TFTs) with Mg-doped ZnSnO (MZTO) channel layers were fabricated by a sol-gel process. The effect of annealing temperature on the electrical characteristics of bottom-gate MZTO TFTs was investigated. For the sample annealed at 400 °C, an amorphous phase was formed, while for the sample annealed at 600 °C, a nanocrystalline MZTO film was obtained. The electrical properties of MZTO TFTs were very sensitive to the annealing temperature. High temperature annealing caused the threshold voltage to shift toward a negative direction and decreased the field-effect mobility and on/off current ratio. The MZTO TFT annealed at 400 °C showed an appropriate threshold voltage, on/off current ratio, and field-effect mobility.

KW - Electrical properties

KW - Microstructure

KW - Oxides

KW - Sol-gel

KW - Transmission electron microscopy (TEM)

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JO - Journal of Korean Institute of Metals and Materials

JF - Journal of Korean Institute of Metals and Materials

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Influence of annealing temperature on the microstnictural and electrical characteristics of MgZnSnO channel layers for thin film transistors

Abstract

Keywords

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