Abstract
Thin film transistors (TFTs) with Mg-doped ZnSnO (MZTO) channel layers were fabricated by a sol-gel process. The effect of annealing temperature on the electrical characteristics of bottom-gate MZTO TFTs was investigated. For the sample annealed at 400 °C, an amorphous phase was formed, while for the sample annealed at 600 °C, a nanocrystalline MZTO film was obtained. The electrical properties of MZTO TFTs were very sensitive to the annealing temperature. High temperature annealing caused the threshold voltage to shift toward a negative direction and decreased the field-effect mobility and on/off current ratio. The MZTO TFT annealed at 400 °C showed an appropriate threshold voltage, on/off current ratio, and field-effect mobility.
| Original language | English |
|---|---|
| Pages (from-to) | 1009-1015 |
| Number of pages | 7 |
| Journal | Journal of Korean Institute of Metals and Materials |
| Volume | 52 |
| Issue number | 12 |
| DOIs | |
| State | Published - 1 Dec 2014 |
Keywords
- Electrical properties
- Microstructure
- Oxides
- Sol-gel
- Transmission electron microscopy (TEM)
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