Influence of ion bombardment on electron emission of MgO surface in AC plasma display panel

Choon Sang Park; Heung Sik Tae; Eun Young Jung; Jeong Hyun Seo; Bhum Jae Shin

doi:10.1109/TPS.2010.2053560

Influence of ion bombardment on electron emission of MgO surface in AC plasma display panel

Choon Sang Park, Heung Sik Tae, Eun Young Jung, Jeong Hyun Seo, Bhum Jae Shin

School of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

The influence of ion bombardment during a sustain discharge on the electron emission of the MgO surface and related driving characteristics of an ac plasma display panel were examined using the cathodoluminescence technique and SIMS analysis. The experimental results showed that severe ion bombardment predominantly sputtered Mg species from the MgO surface, thereby lowering the intensity of the F⁺ center peak to 3.2 eV due to the elimination of the oxygen vacancy and finally increasing the formative address delay time (T_f) due to an aggravated electron emission capability. Meanwhile, severe ion bombardment also destroyed the shallow trap level, thereby lowering the intensity of the shallow peak to 1.85 eV and eventually increasing the statistical address delay time (T_s) due to a poor electron emission capability from the shallow level. Finally, the aggravated electron emission capability from the shallow level resulted in a reduced wall voltage variation during the address period.

Original language	English
Article number	5535141
Pages (from-to)	2439-2444
Number of pages	6
Journal	IEEE Transactions on Plasma Science
Volume	38
Issue number	9 PART 2
DOIs	https://doi.org/10.1109/TPS.2010.2053560
State	Published - Sep 2010

Keywords

Cathodoluminescence (CL)
electron emission
formative address delay time
ion bombardment
statistical address delay time
wall voltage variation

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10.1109/TPS.2010.2053560

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title = "Influence of ion bombardment on electron emission of MgO surface in AC plasma display panel",

abstract = "The influence of ion bombardment during a sustain discharge on the electron emission of the MgO surface and related driving characteristics of an ac plasma display panel were examined using the cathodoluminescence technique and SIMS analysis. The experimental results showed that severe ion bombardment predominantly sputtered Mg species from the MgO surface, thereby lowering the intensity of the F+ center peak to 3.2 eV due to the elimination of the oxygen vacancy and finally increasing the formative address delay time (Tf) due to an aggravated electron emission capability. Meanwhile, severe ion bombardment also destroyed the shallow trap level, thereby lowering the intensity of the shallow peak to 1.85 eV and eventually increasing the statistical address delay time (Ts) due to a poor electron emission capability from the shallow level. Finally, the aggravated electron emission capability from the shallow level resulted in a reduced wall voltage variation during the address period.",

keywords = "Cathodoluminescence (CL), electron emission, formative address delay time, ion bombardment, statistical address delay time, wall voltage variation",

author = "Park, {Choon Sang} and Tae, {Heung Sik} and Jung, {Eun Young} and Seo, {Jeong Hyun} and Shin, {Bhum Jae}",

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T1 - Influence of ion bombardment on electron emission of MgO surface in AC plasma display panel

AU - Park, Choon Sang

AU - Tae, Heung Sik

AU - Jung, Eun Young

AU - Seo, Jeong Hyun

AU - Shin, Bhum Jae

PY - 2010/9

Y1 - 2010/9

N2 - The influence of ion bombardment during a sustain discharge on the electron emission of the MgO surface and related driving characteristics of an ac plasma display panel were examined using the cathodoluminescence technique and SIMS analysis. The experimental results showed that severe ion bombardment predominantly sputtered Mg species from the MgO surface, thereby lowering the intensity of the F+ center peak to 3.2 eV due to the elimination of the oxygen vacancy and finally increasing the formative address delay time (Tf) due to an aggravated electron emission capability. Meanwhile, severe ion bombardment also destroyed the shallow trap level, thereby lowering the intensity of the shallow peak to 1.85 eV and eventually increasing the statistical address delay time (Ts) due to a poor electron emission capability from the shallow level. Finally, the aggravated electron emission capability from the shallow level resulted in a reduced wall voltage variation during the address period.

AB - The influence of ion bombardment during a sustain discharge on the electron emission of the MgO surface and related driving characteristics of an ac plasma display panel were examined using the cathodoluminescence technique and SIMS analysis. The experimental results showed that severe ion bombardment predominantly sputtered Mg species from the MgO surface, thereby lowering the intensity of the F+ center peak to 3.2 eV due to the elimination of the oxygen vacancy and finally increasing the formative address delay time (Tf) due to an aggravated electron emission capability. Meanwhile, severe ion bombardment also destroyed the shallow trap level, thereby lowering the intensity of the shallow peak to 1.85 eV and eventually increasing the statistical address delay time (Ts) due to a poor electron emission capability from the shallow level. Finally, the aggravated electron emission capability from the shallow level resulted in a reduced wall voltage variation during the address period.

KW - Cathodoluminescence (CL)

KW - electron emission

KW - formative address delay time

KW - ion bombardment

KW - statistical address delay time

KW - wall voltage variation

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JO - IEEE Transactions on Plasma Science

JF - IEEE Transactions on Plasma Science

IS - 9 PART 2

M1 - 5535141

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Influence of ion bombardment on electron emission of MgO surface in AC plasma display panel

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Keywords

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