Influence of the oxygen concentration of YSZ gate dielectric layer on the low voltage operating pentacene thin film transistor

Chang Su Kim; Woo Jin Kim; Sung Jin Jo; Sung Won Lee; Se Jong Lee; Hong Koo Baik

doi:10.1149/1.2164568

Influence of the oxygen concentration of YSZ gate dielectric layer on the low voltage operating pentacene thin film transistor

Chang Su Kim, Woo Jin Kim, Sung Jin Jo, Sung Won Lee, Se Jong Lee, Hong Koo Baik

School of Energy Engineering

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

We report on the influence of oxygen concentration on structural and electrical properties of the amorphous yttria-stabilized zirconia (YSZ) thin films which are the potential high- k gate dielectric material of organic thin film transistors (OTFTs). The films were prepared by the E-beam evaporation process. To investigate the influence of the oxygen flow rate on the structural and electrical properties of the YSZ films, X-ray diffraction, X-ray photoelectron spectroscopy, current density-electric field, current-voltage were carried out in this work. Oxygen vacancies are expected to be the most predominant type of defect in metal-oxide dielectrics. The leakage current density decreased mainly because of the reduction of oxygen vacancies with increasing oxygen flow rate.

Original language	English
Pages (from-to)	G96-G99
Journal	Electrochemical and Solid-State Letters
Volume	9
Issue number	3
DOIs	https://doi.org/10.1149/1.2164568
State	Published - 2006

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title = "Influence of the oxygen concentration of YSZ gate dielectric layer on the low voltage operating pentacene thin film transistor",

abstract = "We report on the influence of oxygen concentration on structural and electrical properties of the amorphous yttria-stabilized zirconia (YSZ) thin films which are the potential high- k gate dielectric material of organic thin film transistors (OTFTs). The films were prepared by the E-beam evaporation process. To investigate the influence of the oxygen flow rate on the structural and electrical properties of the YSZ films, X-ray diffraction, X-ray photoelectron spectroscopy, current density-electric field, current-voltage were carried out in this work. Oxygen vacancies are expected to be the most predominant type of defect in metal-oxide dielectrics. The leakage current density decreased mainly because of the reduction of oxygen vacancies with increasing oxygen flow rate.",

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T1 - Influence of the oxygen concentration of YSZ gate dielectric layer on the low voltage operating pentacene thin film transistor

AU - Kim, Chang Su

AU - Kim, Woo Jin

AU - Jo, Sung Jin

AU - Lee, Sung Won

AU - Lee, Se Jong

AU - Baik, Hong Koo

PY - 2006

Y1 - 2006

N2 - We report on the influence of oxygen concentration on structural and electrical properties of the amorphous yttria-stabilized zirconia (YSZ) thin films which are the potential high- k gate dielectric material of organic thin film transistors (OTFTs). The films were prepared by the E-beam evaporation process. To investigate the influence of the oxygen flow rate on the structural and electrical properties of the YSZ films, X-ray diffraction, X-ray photoelectron spectroscopy, current density-electric field, current-voltage were carried out in this work. Oxygen vacancies are expected to be the most predominant type of defect in metal-oxide dielectrics. The leakage current density decreased mainly because of the reduction of oxygen vacancies with increasing oxygen flow rate.

AB - We report on the influence of oxygen concentration on structural and electrical properties of the amorphous yttria-stabilized zirconia (YSZ) thin films which are the potential high- k gate dielectric material of organic thin film transistors (OTFTs). The films were prepared by the E-beam evaporation process. To investigate the influence of the oxygen flow rate on the structural and electrical properties of the YSZ films, X-ray diffraction, X-ray photoelectron spectroscopy, current density-electric field, current-voltage were carried out in this work. Oxygen vacancies are expected to be the most predominant type of defect in metal-oxide dielectrics. The leakage current density decreased mainly because of the reduction of oxygen vacancies with increasing oxygen flow rate.

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JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 3

ER -

Influence of the oxygen concentration of YSZ gate dielectric layer on the low voltage operating pentacene thin film transistor

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