Influence of the oxygen concentration of YSZ gate dielectric layer on the low voltage operating pentacene thin film transistor

We report on the influence of oxygen concentration on structural and electrical properties of the amorphous yttria-stabilized zirconia (YSZ) thin films which are the potential high- k gate dielectric material of organic thin film transistors (OTFTs). The films were prepared by the E-beam evaporation process. To investigate the influence of the oxygen flow rate on the structural and electrical properties of the YSZ films, X-ray diffraction, X-ray photoelectron spectroscopy, current density-electric field, current-voltage were carried out in this work. Oxygen vacancies are expected to be the most predominant type of defect in metal-oxide dielectrics. The leakage current density decreased mainly because of the reduction of oxygen vacancies with increasing oxygen flow rate.