Influence of unit subcell selection on small- And large-signal performance of SiGe power HBTs

Jonghoo Park, Ningyue Jiang, Zhenqiang Ma

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

The influence of unit subcell selection on the small- and large-signal performance of SiGe power HBTs is investigated. It is found that at low input power levels SiGe power HBTs using compact subcells can provide better power performance than using loose ones due to less interconnect parasitics, which is consistent with the small-signal characteristics. At high input power levels, thermal effects dominate over the parasitics effects. As a result, the loose subcells can offer better power performance than the compact ones.

Original languageEnglish
Title of host publication2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07
Pages64-67
Number of pages4
DOIs
StatePublished - 2007
Event2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07 - Long Beach, CA, United States
Duration: 10 Jan 200712 Jan 2007

Publication series

Name2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07

Conference

Conference2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07
Country/TerritoryUnited States
CityLong Beach, CA
Period10/01/0712/01/07

Keywords

  • HBTs
  • Large-signal
  • Parasitic
  • Power gain
  • Power-added efficiency (PAE)
  • RF
  • SiGe
  • Small-signal
  • Subcell
  • Thermal effects

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