@inproceedings{1ba6349a10e945d1a150feb7877f2dc3,
title = "Influences of device size on small- And large-signal performance of SiGe power HBTs",
abstract = "The influences of device size on the small- and large-signal performance of SiGe power HBTs were experimentally studied. It is found that due to the increased parasitica along with the increase of device area, the maximum power gain Gmax (MAG/MSG), maximum oscillation frequency fmax and large-signal power gain continuously decease with the increase of device size. Furthermore, when the device size is larger than a certain area, the degradation of power gain is so severe that further increasing device area will not increase the output power of a SiGe power HBT.",
author = "Guogong Wang and Jonghoo Park and Hui Li and Zhenqiang Ma and Donald Lie and Jerry Lopez and Hurtado, {A. M.}",
year = "2006",
doi = "10.1109/ICSICT.2006.306134",
language = "English",
isbn = "1424401615",
series = "ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings",
publisher = "IEEE Computer Society",
pages = "188--190",
booktitle = "ICSICT-2006",
address = "United States",
note = "ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology ; Conference date: 23-10-2006 Through 26-10-2006",
}