InGaAs HEMT with InAs-rich InAlAs barrier spacer for reduced source resistance

T. W. Kim; D. H. Kim; J. A. Del Alamo

doi:10.1049/el.2010.3666

InGaAs HEMT with InAs-rich InAlAs barrier spacer for reduced source resistance

T. W. Kim, D. H. Kim, J. A. Del Alamo

School of Electronics Engineering

Massachusetts Institute of Technology

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

An InAlAs/InGaAs HEMT with an InAs-rich barrier spacer (In _0.52Al_0.48As) to reduce the parasitic resistance is reported. Devices were obtained with a source resistance of 170Ω-μm. A 40nm gate length In_0.7Ga_0.3As HEMT with L _side=100nm and t_ins=10nm shows excellent transconductance and subthreshold characteristics including g_m=1.6 mS/μm, DIBL=122mV/V and S=80mV/dec at V_DS=0.5V. In addition, this device exhibits an f_T=530GHz and f_max=445GHz at V _DS=0.7V. These excellent characteristics mainly arise from a reduction in the source resistance through the use of the InAs-rich InAlAs spacer.

Original language	English
Pages (from-to)	406-407
Number of pages	2
Journal	Electronics Letters
Volume	47
Issue number	6
DOIs	https://doi.org/10.1049/el.2010.3666
State	Published - 17 Mar 2011

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title = "InGaAs HEMT with InAs-rich InAlAs barrier spacer for reduced source resistance",

abstract = "An InAlAs/InGaAs HEMT with an InAs-rich barrier spacer (In 0.52Al0.48As) to reduce the parasitic resistance is reported. Devices were obtained with a source resistance of 170Ω-μm. A 40nm gate length In0.7Ga0.3As HEMT with L side=100nm and tins=10nm shows excellent transconductance and subthreshold characteristics including gm=1.6 mS/μm, DIBL=122mV/V and S=80mV/dec at VDS=0.5V. In addition, this device exhibits an fT=530GHz and fmax=445GHz at V DS=0.7V. These excellent characteristics mainly arise from a reduction in the source resistance through the use of the InAs-rich InAlAs spacer.",

author = "Kim, {T. W.} and Kim, {D. H.} and {Del Alamo}, {J. A.}",

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T1 - InGaAs HEMT with InAs-rich InAlAs barrier spacer for reduced source resistance

AU - Kim, T. W.

AU - Kim, D. H.

AU - Del Alamo, J. A.

PY - 2011/3/17

Y1 - 2011/3/17

N2 - An InAlAs/InGaAs HEMT with an InAs-rich barrier spacer (In 0.52Al0.48As) to reduce the parasitic resistance is reported. Devices were obtained with a source resistance of 170Ω-μm. A 40nm gate length In0.7Ga0.3As HEMT with L side=100nm and tins=10nm shows excellent transconductance and subthreshold characteristics including gm=1.6 mS/μm, DIBL=122mV/V and S=80mV/dec at VDS=0.5V. In addition, this device exhibits an fT=530GHz and fmax=445GHz at V DS=0.7V. These excellent characteristics mainly arise from a reduction in the source resistance through the use of the InAs-rich InAlAs spacer.

AB - An InAlAs/InGaAs HEMT with an InAs-rich barrier spacer (In 0.52Al0.48As) to reduce the parasitic resistance is reported. Devices were obtained with a source resistance of 170Ω-μm. A 40nm gate length In0.7Ga0.3As HEMT with L side=100nm and tins=10nm shows excellent transconductance and subthreshold characteristics including gm=1.6 mS/μm, DIBL=122mV/V and S=80mV/dec at VDS=0.5V. In addition, this device exhibits an fT=530GHz and fmax=445GHz at V DS=0.7V. These excellent characteristics mainly arise from a reduction in the source resistance through the use of the InAs-rich InAlAs spacer.

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U2 - 10.1049/el.2010.3666

DO - 10.1049/el.2010.3666

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VL - 47

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JO - Electronics Letters

JF - Electronics Letters

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ER -

InGaAs HEMT with InAs-rich InAlAs barrier spacer for reduced source resistance

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