@inproceedings{c7b3f63ad9e849d78eba03ae937557b1,
title = "InGaAs heterostructure FETs (HFETs) for beyond-roadmap CMOS",
abstract = "The increasing difficulties for further scaling down of Si CMOS is bringing to the fore the investigation of alternative channel materials. Among these, III-V compound semiconductors are very attractive due to their outstanding electron transport properties. This paper reviews the prospects and the challenges for a III-V transistor technology for Beyond-roadmap CMOS applications.",
author = "Kim, {Dae Hyun} and {Del Alamo}, {Jesus A.}",
year = "2010",
doi = "10.1149/1.3367951",
language = "English",
isbn = "9781566777957",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "5",
pages = "203--206",
booktitle = "Graphene, Ge/III-V, and Emerging Materials for Post-CMOS Applications 2",
address = "United States",
edition = "5",
}