InGaAs heterostructure FETs (HFETs) for beyond-roadmap CMOS

Dae Hyun Kim, Jesus A. Del Alamo

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The increasing difficulties for further scaling down of Si CMOS is bringing to the fore the investigation of alternative channel materials. Among these, III-V compound semiconductors are very attractive due to their outstanding electron transport properties. This paper reviews the prospects and the challenges for a III-V transistor technology for Beyond-roadmap CMOS applications.

Original languageEnglish
Title of host publicationGraphene, Ge/III-V, and Emerging Materials for Post-CMOS Applications 2
PublisherElectrochemical Society Inc.
Pages203-206
Number of pages4
Edition5
ISBN (Electronic)9781607681458
ISBN (Print)9781566777957
DOIs
StatePublished - 2010

Publication series

NameECS Transactions
Number5
Volume28
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

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