InGaN/GaN laser diodes on semipolar (1011) bulk GaN substrates

Anurag Tyagi; Hong Zhong; Roy B. Chung; Daniel F. Feezell; Makoto Saito; Kenji Fujito; James S. Speck; Steven P. DenBaars; Shuji Nakamura

doi:10.1002/pssc.200778460

InGaN/GaN laser diodes on semipolar (1011) bulk GaN substrates

Anurag Tyagi, Hong Zhong, Roy B. Chung, Daniel F. Feezell, Makoto Saito, Kenji Fujito, James S. Speck, Steven P. DenBaars, Shuji Nakamura

Research output: Contribution to journal › Conference article › peer-review

4 Scopus citations

Abstract

The first semipolar nitride laser diodes (LDs) have been realized on low extended defect density semipolar (1011) GaN bulk substrates. The LDs were grown by conventional metal organic chemical vapor deposition (MOCVD). Broad area lasers with uncoated etched facets were fabricated and tested under pulsed conditions. Lasing was observed at a duty cycle of 0.025% with the threshold current density (J_th) being 24.5 kA/cm² for a 5 μm x 800 μm device. An output power of 65 mW was measured from a single facet of the device at a drive current of 1.5 A, with the calculated differential quantum efficiency (η_diff) being 8%. Stimulated emission was observed at 405.9 nm with a narrow full width half maximum (FWHM) of less than 0.3 nm. The lowest measured J_th was 16.5 kA/cm² for a 10 μm × 800 μm device.

Original language	English
Pages (from-to)	2108-2110
Number of pages	3
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	5
Issue number	6
DOIs	https://doi.org/10.1002/pssc.200778460
State	Published - 2008
Event	7th International Conference of Nitride Semiconductors, ICNS-7 - Las Vegas, NV, United States Duration: 16 Sep 2007 → 21 Sep 2007

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title = "InGaN/GaN laser diodes on semipolar (1011) bulk GaN substrates",

abstract = "The first semipolar nitride laser diodes (LDs) have been realized on low extended defect density semipolar (1011) GaN bulk substrates. The LDs were grown by conventional metal organic chemical vapor deposition (MOCVD). Broad area lasers with uncoated etched facets were fabricated and tested under pulsed conditions. Lasing was observed at a duty cycle of 0.025% with the threshold current density (Jth) being 24.5 kA/cm2 for a 5 μm x 800 μm device. An output power of 65 mW was measured from a single facet of the device at a drive current of 1.5 A, with the calculated differential quantum efficiency (ηdiff) being 8%. Stimulated emission was observed at 405.9 nm with a narrow full width half maximum (FWHM) of less than 0.3 nm. The lowest measured Jth was 16.5 kA/cm2 for a 10 μm × 800 μm device.",

author = "Anurag Tyagi and Hong Zhong and Chung, {Roy B.} and Feezell, {Daniel F.} and Makoto Saito and Kenji Fujito and Speck, {James S.} and DenBaars, {Steven P.} and Shuji Nakamura",

year = "2008",

doi = "10.1002/pssc.200778460",

language = "English",

volume = "5",

pages = "2108--2110",

journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",

issn = "1862-6351",

publisher = "Wiley-VCH Verlag",

number = "6",

note = "7th International Conference of Nitride Semiconductors, ICNS-7 ; Conference date: 16-09-2007 Through 21-09-2007",

}

TY - JOUR

T1 - InGaN/GaN laser diodes on semipolar (1011) bulk GaN substrates

AU - Tyagi, Anurag

AU - Zhong, Hong

AU - Chung, Roy B.

AU - Feezell, Daniel F.

AU - Saito, Makoto

AU - Fujito, Kenji

AU - Speck, James S.

AU - DenBaars, Steven P.

AU - Nakamura, Shuji

PY - 2008

Y1 - 2008

N2 - The first semipolar nitride laser diodes (LDs) have been realized on low extended defect density semipolar (1011) GaN bulk substrates. The LDs were grown by conventional metal organic chemical vapor deposition (MOCVD). Broad area lasers with uncoated etched facets were fabricated and tested under pulsed conditions. Lasing was observed at a duty cycle of 0.025% with the threshold current density (Jth) being 24.5 kA/cm2 for a 5 μm x 800 μm device. An output power of 65 mW was measured from a single facet of the device at a drive current of 1.5 A, with the calculated differential quantum efficiency (ηdiff) being 8%. Stimulated emission was observed at 405.9 nm with a narrow full width half maximum (FWHM) of less than 0.3 nm. The lowest measured Jth was 16.5 kA/cm2 for a 10 μm × 800 μm device.

AB - The first semipolar nitride laser diodes (LDs) have been realized on low extended defect density semipolar (1011) GaN bulk substrates. The LDs were grown by conventional metal organic chemical vapor deposition (MOCVD). Broad area lasers with uncoated etched facets were fabricated and tested under pulsed conditions. Lasing was observed at a duty cycle of 0.025% with the threshold current density (Jth) being 24.5 kA/cm2 for a 5 μm x 800 μm device. An output power of 65 mW was measured from a single facet of the device at a drive current of 1.5 A, with the calculated differential quantum efficiency (ηdiff) being 8%. Stimulated emission was observed at 405.9 nm with a narrow full width half maximum (FWHM) of less than 0.3 nm. The lowest measured Jth was 16.5 kA/cm2 for a 10 μm × 800 μm device.

UR - http://www.scopus.com/inward/record.url?scp=61849129778&partnerID=8YFLogxK

U2 - 10.1002/pssc.200778460

DO - 10.1002/pssc.200778460

M3 - Conference article

AN - SCOPUS:61849129778

SN - 1862-6351

VL - 5

SP - 2108

EP - 2110

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

IS - 6

T2 - 7th International Conference of Nitride Semiconductors, ICNS-7

Y2 - 16 September 2007 through 21 September 2007

ER -

InGaN/GaN laser diodes on semipolar (1011) bulk GaN substrates

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