Instability investigation of In0.7Ga0.3As quantum-well MOSFETs with Al2O3 and Al2O3/HfO2

Hyuk Min Kwon; Do Kywn Kim; Sung Kyu Lim; Hae Chul Hwang; Seung Woo Son; Jung Ho Park; Won Sang Park; Jin Su Kim; Chan Soo Shin; Won Kyu Park; Jung Hee Lee; Taewoo Kim; Dae Hyun Kim

doi:10.1016/j.sse.2016.03.008

Instability investigation of In_0.7Ga_0.3As quantum-well MOSFETs with Al₂O₃ and Al₂O₃/HfO₂

Hyuk Min Kwon, Do Kywn Kim, Sung Kyu Lim, Hae Chul Hwang, Seung Woo Son, Jung Ho Park, Won Sang Park, Jin Su Kim, Chan Soo Shin, Won Kyu Park, Jung Hee Lee, Taewoo Kim, Dae Hyun Kim

School of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

We present an instability investigation of In_0.7Ga_0.3As quantum-well (QW) metal-oxide-semiconductor field-effect-transistors (MOSFETs) on InP substrate with Al₂O₃ and Al₂O₃/HfO₂ gate stacks. The device with bi-layer Al₂O₃/HfO₂ gate stack exhibits larger shift in threshold-voltage (ΔV_T) under a constant-voltage-stress condition (CVS), than one with single Al₂O₃ gate stack. At cryogenic temperature, the device with bi-layer Al₂O₃/HfO₂ gate stack also induces worse hysteresis behavior than one with single Al₂O₃ gate stack. These are mainly attributed to more traps inside the HfO₂ material, yielding a charge build-up inside the HfO₂ gate dielectric. This strongly calls for a follow-up process to minimize those traps within the high-k dielectric layer and eventually to improve the reliability of InGaAs MOSFETs with HfO₂-based high-k gate dielectric.

Original language	English
Pages (from-to)	16-19
Number of pages	4
Journal	Solid-State Electronics
Volume	121
DOIs	https://doi.org/10.1016/j.sse.2016.03.008
State	Published - 1 Jul 2016

Keywords

High-k
InGaAs
Logic
MOSFET
Reliability

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10.1016/j.sse.2016.03.008

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title = "Instability investigation of In0.7Ga0.3As quantum-well MOSFETs with Al2O3 and Al2O3/HfO2",

abstract = "We present an instability investigation of In0.7Ga0.3As quantum-well (QW) metal-oxide-semiconductor field-effect-transistors (MOSFETs) on InP substrate with Al2O3 and Al2O3/HfO2 gate stacks. The device with bi-layer Al2O3/HfO2 gate stack exhibits larger shift in threshold-voltage (ΔVT) under a constant-voltage-stress condition (CVS), than one with single Al2O3 gate stack. At cryogenic temperature, the device with bi-layer Al2O3/HfO2 gate stack also induces worse hysteresis behavior than one with single Al2O3 gate stack. These are mainly attributed to more traps inside the HfO2 material, yielding a charge build-up inside the HfO2 gate dielectric. This strongly calls for a follow-up process to minimize those traps within the high-k dielectric layer and eventually to improve the reliability of InGaAs MOSFETs with HfO2-based high-k gate dielectric.",

keywords = "High-k, InGaAs, Logic, MOSFET, Reliability",

author = "Kwon, {Hyuk Min} and Kim, {Do Kywn} and Lim, {Sung Kyu} and Hwang, {Hae Chul} and Son, {Seung Woo} and Park, {Jung Ho} and Park, {Won Sang} and Kim, {Jin Su} and Shin, {Chan Soo} and Park, {Won Kyu} and Lee, {Jung Hee} and Taewoo Kim and Kim, {Dae Hyun}",

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doi = "10.1016/j.sse.2016.03.008",

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T1 - Instability investigation of In0.7Ga0.3As quantum-well MOSFETs with Al2O3 and Al2O3/HfO2

AU - Kwon, Hyuk Min

AU - Kim, Do Kywn

AU - Lim, Sung Kyu

AU - Hwang, Hae Chul

AU - Son, Seung Woo

AU - Park, Jung Ho

AU - Park, Won Sang

AU - Kim, Jin Su

AU - Shin, Chan Soo

AU - Park, Won Kyu

AU - Lee, Jung Hee

AU - Kim, Taewoo

AU - Kim, Dae Hyun

PY - 2016/7/1

Y1 - 2016/7/1

N2 - We present an instability investigation of In0.7Ga0.3As quantum-well (QW) metal-oxide-semiconductor field-effect-transistors (MOSFETs) on InP substrate with Al2O3 and Al2O3/HfO2 gate stacks. The device with bi-layer Al2O3/HfO2 gate stack exhibits larger shift in threshold-voltage (ΔVT) under a constant-voltage-stress condition (CVS), than one with single Al2O3 gate stack. At cryogenic temperature, the device with bi-layer Al2O3/HfO2 gate stack also induces worse hysteresis behavior than one with single Al2O3 gate stack. These are mainly attributed to more traps inside the HfO2 material, yielding a charge build-up inside the HfO2 gate dielectric. This strongly calls for a follow-up process to minimize those traps within the high-k dielectric layer and eventually to improve the reliability of InGaAs MOSFETs with HfO2-based high-k gate dielectric.

AB - We present an instability investigation of In0.7Ga0.3As quantum-well (QW) metal-oxide-semiconductor field-effect-transistors (MOSFETs) on InP substrate with Al2O3 and Al2O3/HfO2 gate stacks. The device with bi-layer Al2O3/HfO2 gate stack exhibits larger shift in threshold-voltage (ΔVT) under a constant-voltage-stress condition (CVS), than one with single Al2O3 gate stack. At cryogenic temperature, the device with bi-layer Al2O3/HfO2 gate stack also induces worse hysteresis behavior than one with single Al2O3 gate stack. These are mainly attributed to more traps inside the HfO2 material, yielding a charge build-up inside the HfO2 gate dielectric. This strongly calls for a follow-up process to minimize those traps within the high-k dielectric layer and eventually to improve the reliability of InGaAs MOSFETs with HfO2-based high-k gate dielectric.

KW - High-k

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KW - Reliability

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Instability investigation of In_0.7Ga_0.3As quantum-well MOSFETs with Al₂O₃ and Al₂O₃/HfO₂

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