Integrated Silicon Infrared Microspectrometers

S. H. Kong; G. De Graaf; R. F. Wolffenbuttel

doi:10.1557/proc-770-i4.1

Integrated Silicon Infrared Microspectrometers

S. H. Kong, G. De Graaf, R. F. Wolffenbuttel

School of Electronics Engineering

Delft University of Technology

Research output: Contribution to journal › Conference article › peer-review

Abstract

Design, fabrication and performance of a microspectrometer for operation in the infrared spectral range between 1 and 8 μm and fabricated in silicon are presented. The opto-electrical system is composed of two bonded silicon wafers, which have been subjected to microelectronic process compatible micromachining to enable co-integration of the optical components (an aluminum based grating, an optical path in crystalline silicon and an array of integrated polysilicon thermocouples) with readout circuits in silicon. The FWHM is smaller than 0.5 μm at λ= 5 μm. The performance is compared to alternatives and directions for improving the selectivity are given.

Original language	English
Pages (from-to)	201-210
Number of pages	10
Journal	Materials Research Society Symposium Proceedings
Volume	770
DOIs	https://doi.org/10.1557/proc-770-i4.1
State	Published - 2003
Event	Optoelectronics of Group-IV-Based Materials - San Francisco, CA, United States Duration: 21 Apr 2003 → 24 Apr 2003

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author = "Kong, {S. H.} and {De Graaf}, G. and Wolffenbuttel, {R. F.}",

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AU - De Graaf, G.

AU - Wolffenbuttel, R. F.

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AB - Design, fabrication and performance of a microspectrometer for operation in the infrared spectral range between 1 and 8 μm and fabricated in silicon are presented. The opto-electrical system is composed of two bonded silicon wafers, which have been subjected to microelectronic process compatible micromachining to enable co-integration of the optical components (an aluminum based grating, an optical path in crystalline silicon and an array of integrated polysilicon thermocouples) with readout circuits in silicon. The FWHM is smaller than 0.5 μm at λ= 5 μm. The performance is compared to alternatives and directions for improving the selectivity are given.

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JO - Materials Research Society Symposium Proceedings

JF - Materials Research Society Symposium Proceedings

T2 - Optoelectronics of Group-IV-Based Materials

Y2 - 21 April 2003 through 24 April 2003

ER -

Integrated Silicon Infrared Microspectrometers

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