Integration challenges for high-performance carbon nanotube logic

James B. Hannon, Hongsik Park, George S. Tulevski, Wilfried Haensch

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

As the scaling of silicon-based devices becomes more challenging, alternative channel materials are being actively explored. One approach is to replace the silicon channel with nanoparticles - for example, carbon nanotubes - that offer higher performance and better scaling potential. However, the incorporation of nanoparticles requires the development of new 'bottom up' fabrication techniques to grow or place particles at precise locations on a substrate. The inherent randomness of these assembly processes has an obvious impact on device yield, which must be taken into account in optimizing the layout of a device. Here we describe a simple statistical analysis of device yield that can give insight into the self-assembly process, and is particularly useful for characterizing nanoparticle self-assembly from solution.

Original languageEnglish
Title of host publication2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages123-127
Number of pages5
ISBN (Electronic)9781479972302
DOIs
StatePublished - 9 Dec 2014
Event2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2014 - Coronado, United States
Duration: 28 Sep 20141 Oct 2014

Publication series

NameProceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting
ISSN (Print)1088-9299

Conference

Conference2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2014
Country/TerritoryUnited States
CityCoronado
Period28/09/141/10/14

Keywords

  • carbon nanotubes
  • nanoparticles
  • placement
  • self assembly

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