Investigation of characteristics of SAW filter using undoped GaN epitaxial layer grown by MOCVD on sapphire substrate

Sun Ki Kim; Min Jung Park; Cheol Yeong Jang; Jae Hoon Lee; Hyun Chul Choi; Jung Hee Lee; Yong Hyun Lee

doi:10.1109/ULTSYM.2001.991621

Investigation of characteristics of SAW filter using undoped GaN epitaxial layer grown by MOCVD on sapphire substrate

Sun Ki Kim, Min Jung Park, Cheol Yeong Jang, Jae Hoon Lee, Hyun Chul Choi, Jung Hee Lee, Yong Hyun Lee

School of Electronics Engineering

Kyungpook National University

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Characteristics of SAW filter using GaN thin film such as SAW velocity, electro-mechanical coupling coefficient k², temperature coefficient of frequency (TCF), and propagation loss were investigated. GaN thin film was deposited on sapphire substrate by MOCVD and its characteristics were measured experimentally with changing the kh value from 0.18 to 1.25. Phase velocity was estimated as 5546 m/s, electro-mechanical coupling coefficient k² was ranged from 4.738% to 0.1864%, and TCF was -61.82 ppm/°C. Propagation loss, estimated by measuring insertion loss, was ranged from 3.21 × 10^-3 dB/λ to 9.10 × 10^-3 dB/λ with changing kh value.

Original language	English
Pages (from-to)	257-260
Number of pages	4
Journal	Proceedings of the IEEE Ultrasonics Symposium
Volume	1
DOIs	https://doi.org/10.1109/ULTSYM.2001.991621
State	Published - 2001

Keywords

Filter
GaN
MOCVD
SAW

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10.1109/ULTSYM.2001.991621

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title = "Investigation of characteristics of SAW filter using undoped GaN epitaxial layer grown by MOCVD on sapphire substrate",

abstract = "Characteristics of SAW filter using GaN thin film such as SAW velocity, electro-mechanical coupling coefficient k2, temperature coefficient of frequency (TCF), and propagation loss were investigated. GaN thin film was deposited on sapphire substrate by MOCVD and its characteristics were measured experimentally with changing the kh value from 0.18 to 1.25. Phase velocity was estimated as 5546 m/s, electro-mechanical coupling coefficient k2 was ranged from 4.738% to 0.1864%, and TCF was -61.82 ppm/°C. Propagation loss, estimated by measuring insertion loss, was ranged from 3.21 × 10-3 dB/λ to 9.10 × 10-3 dB/λ with changing kh value.",

keywords = "Filter, GaN, MOCVD, SAW",

author = "Kim, {Sun Ki} and Park, {Min Jung} and Jang, {Cheol Yeong} and Lee, {Jae Hoon} and Choi, {Hyun Chul} and Lee, {Jung Hee} and Lee, {Yong Hyun}",

year = "2001",

doi = "10.1109/ULTSYM.2001.991621",

language = "English",

volume = "1",

pages = "257--260",

journal = "Proceedings of the IEEE Ultrasonics Symposium",

issn = "1051-0117",

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TY - JOUR

T1 - Investigation of characteristics of SAW filter using undoped GaN epitaxial layer grown by MOCVD on sapphire substrate

AU - Kim, Sun Ki

AU - Park, Min Jung

AU - Jang, Cheol Yeong

AU - Lee, Jae Hoon

AU - Choi, Hyun Chul

AU - Lee, Jung Hee

AU - Lee, Yong Hyun

PY - 2001

Y1 - 2001

N2 - Characteristics of SAW filter using GaN thin film such as SAW velocity, electro-mechanical coupling coefficient k2, temperature coefficient of frequency (TCF), and propagation loss were investigated. GaN thin film was deposited on sapphire substrate by MOCVD and its characteristics were measured experimentally with changing the kh value from 0.18 to 1.25. Phase velocity was estimated as 5546 m/s, electro-mechanical coupling coefficient k2 was ranged from 4.738% to 0.1864%, and TCF was -61.82 ppm/°C. Propagation loss, estimated by measuring insertion loss, was ranged from 3.21 × 10-3 dB/λ to 9.10 × 10-3 dB/λ with changing kh value.

AB - Characteristics of SAW filter using GaN thin film such as SAW velocity, electro-mechanical coupling coefficient k2, temperature coefficient of frequency (TCF), and propagation loss were investigated. GaN thin film was deposited on sapphire substrate by MOCVD and its characteristics were measured experimentally with changing the kh value from 0.18 to 1.25. Phase velocity was estimated as 5546 m/s, electro-mechanical coupling coefficient k2 was ranged from 4.738% to 0.1864%, and TCF was -61.82 ppm/°C. Propagation loss, estimated by measuring insertion loss, was ranged from 3.21 × 10-3 dB/λ to 9.10 × 10-3 dB/λ with changing kh value.

KW - Filter

KW - GaN

KW - MOCVD

KW - SAW

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U2 - 10.1109/ULTSYM.2001.991621

DO - 10.1109/ULTSYM.2001.991621

M3 - Article

AN - SCOPUS:0035732544

SN - 1051-0117

VL - 1

SP - 257

EP - 260

JO - Proceedings of the IEEE Ultrasonics Symposium

JF - Proceedings of the IEEE Ultrasonics Symposium

ER -

Investigation of characteristics of SAW filter using undoped GaN epitaxial layer grown by MOCVD on sapphire substrate

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Keywords

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