Investigation of dopant dependent wave velocity in GaN thin film SAW filter

Hwan Hee Jeong; Sun Ki Kim; Jae Sung Lee; Hyun Chul Choi; Jung Hee Lee; Yong Hyun Lee

doi:10.1109/ULTSYM.2001.991610

Investigation of dopant dependent wave velocity in GaN thin film SAW filter

Hwan Hee Jeong, Sun Ki Kim, Jae Sung Lee, Hyun Chul Choi, Jung Hee Lee, Yong Hyun Lee

School of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Undoped, Zn-doped, Mg-doped GaN thin film were prepared on sapphire substrate by MOCVD. SAW velocity was measured with the center frequency by HP8753C. Mg-doped GaN has the highest SAW velocity of 5617 m/s at kh=0.157 and undoped GaN has the lowest SAW velocity of 5400 m/s at kh=0.188. TCF is - 60.8 ppm/°C for undoped GaN, -46.8 ppm/°C for Zn-doped GaN and -18.3 ppm/°C for Mg-doped GaN, respectively.

Original language	English
Pages (from-to)	207-209
Number of pages	3
Journal	Proceedings of the IEEE Ultrasonics Symposium
Volume	1
DOIs	https://doi.org/10.1109/ULTSYM.2001.991610
State	Published - 2001

Keywords

Mg-doped GaN
MOCVD
SAW filter
Zn-doped GaN

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title = "Investigation of dopant dependent wave velocity in GaN thin film SAW filter",

abstract = "Undoped, Zn-doped, Mg-doped GaN thin film were prepared on sapphire substrate by MOCVD. SAW velocity was measured with the center frequency by HP8753C. Mg-doped GaN has the highest SAW velocity of 5617 m/s at kh=0.157 and undoped GaN has the lowest SAW velocity of 5400 m/s at kh=0.188. TCF is - 60.8 ppm/°C for undoped GaN, -46.8 ppm/°C for Zn-doped GaN and -18.3 ppm/°C for Mg-doped GaN, respectively.",

keywords = "Mg-doped GaN, MOCVD, SAW filter, Zn-doped GaN",

author = "Jeong, {Hwan Hee} and Kim, {Sun Ki} and Lee, {Jae Sung} and Choi, {Hyun Chul} and Lee, {Jung Hee} and Lee, {Yong Hyun}",

year = "2001",

doi = "10.1109/ULTSYM.2001.991610",

language = "English",

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pages = "207--209",

journal = "Proceedings of the IEEE Ultrasonics Symposium",

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T1 - Investigation of dopant dependent wave velocity in GaN thin film SAW filter

AU - Jeong, Hwan Hee

AU - Kim, Sun Ki

AU - Lee, Jae Sung

AU - Choi, Hyun Chul

AU - Lee, Jung Hee

AU - Lee, Yong Hyun

PY - 2001

Y1 - 2001

N2 - Undoped, Zn-doped, Mg-doped GaN thin film were prepared on sapphire substrate by MOCVD. SAW velocity was measured with the center frequency by HP8753C. Mg-doped GaN has the highest SAW velocity of 5617 m/s at kh=0.157 and undoped GaN has the lowest SAW velocity of 5400 m/s at kh=0.188. TCF is - 60.8 ppm/°C for undoped GaN, -46.8 ppm/°C for Zn-doped GaN and -18.3 ppm/°C for Mg-doped GaN, respectively.

AB - Undoped, Zn-doped, Mg-doped GaN thin film were prepared on sapphire substrate by MOCVD. SAW velocity was measured with the center frequency by HP8753C. Mg-doped GaN has the highest SAW velocity of 5617 m/s at kh=0.157 and undoped GaN has the lowest SAW velocity of 5400 m/s at kh=0.188. TCF is - 60.8 ppm/°C for undoped GaN, -46.8 ppm/°C for Zn-doped GaN and -18.3 ppm/°C for Mg-doped GaN, respectively.

KW - Mg-doped GaN

KW - MOCVD

KW - SAW filter

KW - Zn-doped GaN

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DO - 10.1109/ULTSYM.2001.991610

M3 - Article

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SP - 207

EP - 209

JO - Proceedings of the IEEE Ultrasonics Symposium

JF - Proceedings of the IEEE Ultrasonics Symposium

ER -

Investigation of dopant dependent wave velocity in GaN thin film SAW filter

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Keywords

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