Investigation of dopant dependent wave velocity in GaN thin film SAW filter

Hwan Hee Jeong; Sun Ki Kim; Jae Sung Lee; Hyun Chul Choi; Jung Hee Lee; Yong Hyun Lee

doi:10.1109/ULTSYM.2001.991610

Investigation of dopant dependent wave velocity in GaN thin film SAW filter

Hwan Hee Jeong
, Sun Ki Kim
, Jae Sung Lee
, Hyun Chul Choi
, Jung Hee Lee
, Yong Hyun Lee

School of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Undoped, Zn-doped, Mg-doped GaN thin film were prepared on sapphire substrate by MOCVD. SAW velocity was measured with the center frequency by HP8753C. Mg-doped GaN has the highest SAW velocity of 5617 m/s at kh=0.157 and undoped GaN has the lowest SAW velocity of 5400 m/s at kh=0.188. TCF is - 60.8 ppm/°C for undoped GaN, -46.8 ppm/°C for Zn-doped GaN and -18.3 ppm/°C for Mg-doped GaN, respectively.

Original language	English
Pages (from-to)	207-209
Number of pages	3
Journal	Proceedings of the IEEE Ultrasonics Symposium
Volume	1
DOIs	https://doi.org/10.1109/ULTSYM.2001.991610
State	Published - 2001

Keywords

Mg-doped GaN
MOCVD
SAW filter
Zn-doped GaN

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10.1109/ULTSYM.2001.991610

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title = "Investigation of dopant dependent wave velocity in GaN thin film SAW filter",

abstract = "Undoped, Zn-doped, Mg-doped GaN thin film were prepared on sapphire substrate by MOCVD. SAW velocity was measured with the center frequency by HP8753C. Mg-doped GaN has the highest SAW velocity of 5617 m/s at kh=0.157 and undoped GaN has the lowest SAW velocity of 5400 m/s at kh=0.188. TCF is - 60.8 ppm/°C for undoped GaN, -46.8 ppm/°C for Zn-doped GaN and -18.3 ppm/°C for Mg-doped GaN, respectively.",

keywords = "Mg-doped GaN, MOCVD, SAW filter, Zn-doped GaN",

author = "Jeong, \{Hwan Hee\} and Kim, \{Sun Ki\} and Lee, \{Jae Sung\} and Choi, \{Hyun Chul\} and Lee, \{Jung Hee\} and Lee, \{Yong Hyun\}",

year = "2001",

doi = "10.1109/ULTSYM.2001.991610",

language = "English",

volume = "1",

pages = "207--209",

journal = "Proceedings of the IEEE Ultrasonics Symposium",

issn = "1051-0117",

publisher = "IEEE Computer Society",

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TY - JOUR

T1 - Investigation of dopant dependent wave velocity in GaN thin film SAW filter

AU - Jeong, Hwan Hee

AU - Kim, Sun Ki

AU - Lee, Jae Sung

AU - Choi, Hyun Chul

AU - Lee, Jung Hee

AU - Lee, Yong Hyun

PY - 2001

Y1 - 2001

N2 - Undoped, Zn-doped, Mg-doped GaN thin film were prepared on sapphire substrate by MOCVD. SAW velocity was measured with the center frequency by HP8753C. Mg-doped GaN has the highest SAW velocity of 5617 m/s at kh=0.157 and undoped GaN has the lowest SAW velocity of 5400 m/s at kh=0.188. TCF is - 60.8 ppm/°C for undoped GaN, -46.8 ppm/°C for Zn-doped GaN and -18.3 ppm/°C for Mg-doped GaN, respectively.

AB - Undoped, Zn-doped, Mg-doped GaN thin film were prepared on sapphire substrate by MOCVD. SAW velocity was measured with the center frequency by HP8753C. Mg-doped GaN has the highest SAW velocity of 5617 m/s at kh=0.157 and undoped GaN has the lowest SAW velocity of 5400 m/s at kh=0.188. TCF is - 60.8 ppm/°C for undoped GaN, -46.8 ppm/°C for Zn-doped GaN and -18.3 ppm/°C for Mg-doped GaN, respectively.

KW - Mg-doped GaN

KW - MOCVD

KW - SAW filter

KW - Zn-doped GaN

UR - https://www.scopus.com/pages/publications/0035731389

U2 - 10.1109/ULTSYM.2001.991610

DO - 10.1109/ULTSYM.2001.991610

M3 - Article

AN - SCOPUS:0035731389

SN - 1051-0117

VL - 1

SP - 207

EP - 209

JO - Proceedings of the IEEE Ultrasonics Symposium

JF - Proceedings of the IEEE Ultrasonics Symposium

ER -

Investigation of dopant dependent wave velocity in GaN thin film SAW filter

Abstract

Keywords

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