Investigation of InAs/InGaAs/InP heterojunction tunneling field-effect transistors

Hye Rim Eun; Sung Yun Woo; Hwan Gi Lee; Young Jun Yoon; Jae Hwa Seo; Jung Hee Lee; Jungjoon Kim; In Man Kang

doi:10.5370/JEET.2014.9.5.1654

Investigation of InAs/InGaAs/InP heterojunction tunneling field-effect transistors

Hye Rim Eun, Sung Yun Woo, Hwan Gi Lee, Young Jun Yoon, Jae Hwa Seo, Jung Hee Lee, Jungjoon Kim, In Man Kang

School of Electronics Engineering

Kyungpook National University

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Tunneling field-effect transistors (TFETs) are very applicable to low standby-power application by their virtues of low off-current (I_off) and small subthreshold swing (S). However, low on-current (I_on) of silicon-based TFETs has been pointed out as a drawback. To improve I_on of TFET, a gate-all-around (GAA) TFET based on III-V compound semiconductor with InAs/InGaAs/InP multiple-heterojunction structure is proposed and investigated. Its performances have been evaluated with the gallium (Ga) composition (x) for In_1-xGa_xAs in the channel region. According to the simulation results for I_on, I_off, S, and on/off current ratio (I_on/I_off), the device adopting In_0.53Ga_0.47As channel showed the optimum direct-current (DC) performance, as a result of controlling the Ga fraction. By introducing an n-type InGaAs thin layer near the source end, improved DC characteristics and radio-frequency (RF) performances were obtained due to boosted band-to-band (BTB) tunneling efficiency.

Original language	English
Pages (from-to)	1654-1659
Number of pages	6
Journal	Journal of Electrical Engineering and Technology
Volume	9
Issue number	5
DOIs	https://doi.org/10.5370/JEET.2014.9.5.1654
State	Published - Aug 2014

Keywords

Gate-all-around
InAs/inGaAs/inp heterojunction
TCAD
Tunneling field-effect transistor

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10.5370/JEET.2014.9.5.1654

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title = "Investigation of InAs/InGaAs/InP heterojunction tunneling field-effect transistors",

abstract = "Tunneling field-effect transistors (TFETs) are very applicable to low standby-power application by their virtues of low off-current (Ioff) and small subthreshold swing (S). However, low on-current (Ion) of silicon-based TFETs has been pointed out as a drawback. To improve Ion of TFET, a gate-all-around (GAA) TFET based on III-V compound semiconductor with InAs/InGaAs/InP multiple-heterojunction structure is proposed and investigated. Its performances have been evaluated with the gallium (Ga) composition (x) for In1-xGaxAs in the channel region. According to the simulation results for Ion, Ioff, S, and on/off current ratio (Ion/Ioff), the device adopting In0.53Ga0.47As channel showed the optimum direct-current (DC) performance, as a result of controlling the Ga fraction. By introducing an n-type InGaAs thin layer near the source end, improved DC characteristics and radio-frequency (RF) performances were obtained due to boosted band-to-band (BTB) tunneling efficiency.",

keywords = "Gate-all-around, InAs/inGaAs/inp heterojunction, TCAD, Tunneling field-effect transistor",

author = "Eun, {Hye Rim} and Woo, {Sung Yun} and Lee, {Hwan Gi} and Yoon, {Young Jun} and Seo, {Jae Hwa} and Lee, {Jung Hee} and Jungjoon Kim and Kang, {In Man}",

year = "2014",

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T1 - Investigation of InAs/InGaAs/InP heterojunction tunneling field-effect transistors

AU - Eun, Hye Rim

AU - Woo, Sung Yun

AU - Lee, Hwan Gi

AU - Yoon, Young Jun

AU - Seo, Jae Hwa

AU - Lee, Jung Hee

AU - Kim, Jungjoon

AU - Kang, In Man

PY - 2014/8

Y1 - 2014/8

N2 - Tunneling field-effect transistors (TFETs) are very applicable to low standby-power application by their virtues of low off-current (Ioff) and small subthreshold swing (S). However, low on-current (Ion) of silicon-based TFETs has been pointed out as a drawback. To improve Ion of TFET, a gate-all-around (GAA) TFET based on III-V compound semiconductor with InAs/InGaAs/InP multiple-heterojunction structure is proposed and investigated. Its performances have been evaluated with the gallium (Ga) composition (x) for In1-xGaxAs in the channel region. According to the simulation results for Ion, Ioff, S, and on/off current ratio (Ion/Ioff), the device adopting In0.53Ga0.47As channel showed the optimum direct-current (DC) performance, as a result of controlling the Ga fraction. By introducing an n-type InGaAs thin layer near the source end, improved DC characteristics and radio-frequency (RF) performances were obtained due to boosted band-to-band (BTB) tunneling efficiency.

AB - Tunneling field-effect transistors (TFETs) are very applicable to low standby-power application by their virtues of low off-current (Ioff) and small subthreshold swing (S). However, low on-current (Ion) of silicon-based TFETs has been pointed out as a drawback. To improve Ion of TFET, a gate-all-around (GAA) TFET based on III-V compound semiconductor with InAs/InGaAs/InP multiple-heterojunction structure is proposed and investigated. Its performances have been evaluated with the gallium (Ga) composition (x) for In1-xGaxAs in the channel region. According to the simulation results for Ion, Ioff, S, and on/off current ratio (Ion/Ioff), the device adopting In0.53Ga0.47As channel showed the optimum direct-current (DC) performance, as a result of controlling the Ga fraction. By introducing an n-type InGaAs thin layer near the source end, improved DC characteristics and radio-frequency (RF) performances were obtained due to boosted band-to-band (BTB) tunneling efficiency.

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Investigation of InAs/InGaAs/InP heterojunction tunneling field-effect transistors

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