Investigation of resistive probes with high sensitivity

Sang Wan Kim; Jae Young Song; Jong Pil Kim; Woo Young Choi; Han Ki Chung; Jae Hyun Park; Hyungsoo Ko; Hongsik Park; Chulmin Park; Seungbum Hong; Sung Hoon Choa; Jong Duk Lee; Hyungcheol Shin; Byung Gook Park

doi:10.1109/SNW.2008.5418407

Investigation of resistive probes with high sensitivity

Sang Wan Kim, Jae Young Song, Jong Pil Kim, Woo Young Choi, Han Ki Chung, Jae Hyun Park, Hyungsoo Ko, Hongsik Park, Chulmin Park, Seungbum Hong, Sung Hoon Choa, Jong Duk Lee, Hyungcheol Shin, Byung Gook Park

School of Electronics Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Novel fabrication methods are investigated to enhance the sensitivity of resistive probes. In this paper, two new silicon resistive probes are presented by using two-dimensional device simulation (SILVACO™). Enhancement probe and 1-MOS probe are formed by using anisotropic etch and mask transcription process. Due to novel structures, the sensitivity of resistive probes is increased dramatically.

Original language	English
Title of host publication	IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008
DOIs	https://doi.org/10.1109/SNW.2008.5418407
State	Published - 2008
Event	IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008 - Honolulu, HI, United States Duration: 15 Jun 2008 → 16 Jun 2008

Publication series

Name	IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008

Conference

Conference	IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008
Country/Territory	United States
City	Honolulu, HI
Period	15/06/08 → 16/06/08

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10.1109/SNW.2008.5418407

Cite this

Kim, S. W., Song, J. Y., Kim, J. P., Choi, W. Y., Chung, H. K., Park, J. H., Ko, H., Park, H., Park, C., Hong, S., Choa, S. H., Lee, J. D., Shin, H., & Park, B. G. (2008). Investigation of resistive probes with high sensitivity. In IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008 Article 5418407 (IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008). https://doi.org/10.1109/SNW.2008.5418407

@inproceedings{371135c278db411295c10dd75a52109c,

title = "Investigation of resistive probes with high sensitivity",

abstract = "Novel fabrication methods are investigated to enhance the sensitivity of resistive probes. In this paper, two new silicon resistive probes are presented by using two-dimensional device simulation (SILVACO{\texttrademark}). Enhancement probe and 1-MOS probe are formed by using anisotropic etch and mask transcription process. Due to novel structures, the sensitivity of resistive probes is increased dramatically.",

author = "Kim, {Sang Wan} and Song, {Jae Young} and Kim, {Jong Pil} and Choi, {Woo Young} and Chung, {Han Ki} and Park, {Jae Hyun} and Hyungsoo Ko and Hongsik Park and Chulmin Park and Seungbum Hong and Choa, {Sung Hoon} and Lee, {Jong Duk} and Hyungcheol Shin and Park, {Byung Gook}",

year = "2008",

doi = "10.1109/SNW.2008.5418407",

language = "English",

isbn = "9781424420711",

series = "IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008",

booktitle = "IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008",

note = "IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008 ; Conference date: 15-06-2008 Through 16-06-2008",

}

Kim, SW, Song, JY, Kim, JP, Choi, WY, Chung, HK, Park, JH, Ko, H, Park, H, Park, C, Hong, S, Choa, SH, Lee, JD, Shin, H & Park, BG 2008, Investigation of resistive probes with high sensitivity. in IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008., 5418407, IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008, IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008, Honolulu, HI, United States, 15/06/08. https://doi.org/10.1109/SNW.2008.5418407

TY - GEN

T1 - Investigation of resistive probes with high sensitivity

AU - Kim, Sang Wan

AU - Song, Jae Young

AU - Kim, Jong Pil

AU - Choi, Woo Young

AU - Chung, Han Ki

AU - Park, Jae Hyun

AU - Ko, Hyungsoo

AU - Park, Hongsik

AU - Park, Chulmin

AU - Hong, Seungbum

AU - Choa, Sung Hoon

AU - Lee, Jong Duk

AU - Shin, Hyungcheol

AU - Park, Byung Gook

PY - 2008

Y1 - 2008

N2 - Novel fabrication methods are investigated to enhance the sensitivity of resistive probes. In this paper, two new silicon resistive probes are presented by using two-dimensional device simulation (SILVACO™). Enhancement probe and 1-MOS probe are formed by using anisotropic etch and mask transcription process. Due to novel structures, the sensitivity of resistive probes is increased dramatically.

AB - Novel fabrication methods are investigated to enhance the sensitivity of resistive probes. In this paper, two new silicon resistive probes are presented by using two-dimensional device simulation (SILVACO™). Enhancement probe and 1-MOS probe are formed by using anisotropic etch and mask transcription process. Due to novel structures, the sensitivity of resistive probes is increased dramatically.

UR - http://www.scopus.com/inward/record.url?scp=77950018482&partnerID=8YFLogxK

U2 - 10.1109/SNW.2008.5418407

DO - 10.1109/SNW.2008.5418407

M3 - Conference contribution

AN - SCOPUS:77950018482

SN - 9781424420711

T3 - IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008

BT - IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008

T2 - IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008

Y2 - 15 June 2008 through 16 June 2008

ER -

Investigation of resistive probes with high sensitivity

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