Ion-implantation-enhanced chalcogenide-glass resistive-switching devices

Mark A. Hughes; Yanina Fedorenko; Russell M. Gwilliam; Kevin P. Homewood; Steven Hinder; Behrad Gholipour; Daniel W. Hewak; Tae Hoon Lee; Stephen R. Elliott; Richard J. Curry

doi:10.1063/1.4894245

Ion-implantation-enhanced chalcogenide-glass resistive-switching devices

Mark A. Hughes, Yanina Fedorenko, Russell M. Gwilliam, Kevin P. Homewood, Steven Hinder, Behrad Gholipour, Daniel W. Hewak, Tae Hoon Lee, Stephen R. Elliott, Richard J. Curry

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

We report amorphous GaLaSO-based resistive switching devices, with and without Pb-implantation before deposition of an Al active electrode, which switch due to deposition and dissolution of Al metal filaments. The devices set at 2-3 and 3-4 V with resistance ratios of 6 × 10⁴ and 3 × 10⁹ for the unimplanted and Pb-implanted devices, respectively. The devices reset under positive Al electrode bias, and Al diffused 40 nm further into GaLaSO in the unimplanted device. We attribute the positive reset and higher set bias, compared to devices using Ag or Cu active electrodes, to the greater propensity of Al to oxidise.

Original language	English
Article number	083506
Journal	Applied Physics Letters
Volume	105
Issue number	8
DOIs	https://doi.org/10.1063/1.4894245
State	Published - 25 Aug 2014

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title = "Ion-implantation-enhanced chalcogenide-glass resistive-switching devices",

abstract = "We report amorphous GaLaSO-based resistive switching devices, with and without Pb-implantation before deposition of an Al active electrode, which switch due to deposition and dissolution of Al metal filaments. The devices set at 2-3 and 3-4 V with resistance ratios of 6 × 104 and 3 × 109 for the unimplanted and Pb-implanted devices, respectively. The devices reset under positive Al electrode bias, and Al diffused 40 nm further into GaLaSO in the unimplanted device. We attribute the positive reset and higher set bias, compared to devices using Ag or Cu active electrodes, to the greater propensity of Al to oxidise.",

author = "Hughes, {Mark A.} and Yanina Fedorenko and Gwilliam, {Russell M.} and Homewood, {Kevin P.} and Steven Hinder and Behrad Gholipour and Hewak, {Daniel W.} and Lee, {Tae Hoon} and Elliott, {Stephen R.} and Curry, {Richard J.}",

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doi = "10.1063/1.4894245",

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T1 - Ion-implantation-enhanced chalcogenide-glass resistive-switching devices

AU - Hughes, Mark A.

AU - Fedorenko, Yanina

AU - Gwilliam, Russell M.

AU - Homewood, Kevin P.

AU - Hinder, Steven

AU - Gholipour, Behrad

AU - Hewak, Daniel W.

AU - Lee, Tae Hoon

AU - Elliott, Stephen R.

AU - Curry, Richard J.

PY - 2014/8/25

Y1 - 2014/8/25

N2 - We report amorphous GaLaSO-based resistive switching devices, with and without Pb-implantation before deposition of an Al active electrode, which switch due to deposition and dissolution of Al metal filaments. The devices set at 2-3 and 3-4 V with resistance ratios of 6 × 104 and 3 × 109 for the unimplanted and Pb-implanted devices, respectively. The devices reset under positive Al electrode bias, and Al diffused 40 nm further into GaLaSO in the unimplanted device. We attribute the positive reset and higher set bias, compared to devices using Ag or Cu active electrodes, to the greater propensity of Al to oxidise.

AB - We report amorphous GaLaSO-based resistive switching devices, with and without Pb-implantation before deposition of an Al active electrode, which switch due to deposition and dissolution of Al metal filaments. The devices set at 2-3 and 3-4 V with resistance ratios of 6 × 104 and 3 × 109 for the unimplanted and Pb-implanted devices, respectively. The devices reset under positive Al electrode bias, and Al diffused 40 nm further into GaLaSO in the unimplanted device. We attribute the positive reset and higher set bias, compared to devices using Ag or Cu active electrodes, to the greater propensity of Al to oxidise.

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U2 - 10.1063/1.4894245

DO - 10.1063/1.4894245

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VL - 105

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

M1 - 083506

ER -

Ion-implantation-enhanced chalcogenide-glass resistive-switching devices

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