L g = 25 nm InGaAs/InAlAs high-electron mobility transistors with both f T and f max in excess of 700 GHz

Hyeon Bhin Jo; Do Young Yun; Ji Min Baek; Jung Hee Lee; Tae Woo Kim; Dae Hyun Kim; Takuya Tsutsumi; Hiroki Sugiyama; Hideaki Matsuzaki

doi:10.7567/1882-0786/ab1943

L _g = 25 nm InGaAs/InAlAs high-electron mobility transistors with both f _T and f _max in excess of 700 GHz

Hyeon Bhin Jo, Do Young Yun, Ji Min Baek, Jung Hee Lee, Tae Woo Kim, Dae Hyun Kim, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki

School of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

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Abstract

In this paper, we report an L _g = 25 nm InGaAs/InAlAs HEMT on InP substrate that delivers excellent high-frequency characteristics. The device exhibited a value of maximum transconductance (g _m-max) = 2.8 mS μm^-1 at V _DS = 0.8 V and on-resistance (R _ON) = 279 Ω μm. At I _D = 0.56 mA μm^-1 and V _DS = 0.5 V, the same device displayed an excellent combination of f _T = 703 GHz and f _max = 820 GHz. To the best of the authors' knowledge, this is the first demonstration of a transistor with both f _T and f _max over 700 GHz on any material system.

Original language	English
Article number	054006
Journal	Applied Physics Express
Volume	12
Issue number	5
DOIs	https://doi.org/10.7567/1882-0786/ab1943
State	Published - 1 May 2019

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title = "L g = 25 nm InGaAs/InAlAs high-electron mobility transistors with both f T and f max in excess of 700 GHz",

abstract = "In this paper, we report an L g = 25 nm InGaAs/InAlAs HEMT on InP substrate that delivers excellent high-frequency characteristics. The device exhibited a value of maximum transconductance (g m-max) = 2.8 mS μm-1 at V DS = 0.8 V and on-resistance (R ON) = 279 Ω μm. At I D = 0.56 mA μm-1 and V DS = 0.5 V, the same device displayed an excellent combination of f T = 703 GHz and f max = 820 GHz. To the best of the authors' knowledge, this is the first demonstration of a transistor with both f T and f max over 700 GHz on any material system.",

author = "Jo, {Hyeon Bhin} and Yun, {Do Young} and Baek, {Ji Min} and Lee, {Jung Hee} and Kim, {Tae Woo} and Kim, {Dae Hyun} and Takuya Tsutsumi and Hiroki Sugiyama and Hideaki Matsuzaki",

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T1 - L g = 25 nm InGaAs/InAlAs high-electron mobility transistors with both f T and f max in excess of 700 GHz

AU - Jo, Hyeon Bhin

AU - Yun, Do Young

AU - Baek, Ji Min

AU - Lee, Jung Hee

AU - Kim, Tae Woo

AU - Kim, Dae Hyun

AU - Tsutsumi, Takuya

AU - Sugiyama, Hiroki

AU - Matsuzaki, Hideaki

PY - 2019/5/1

Y1 - 2019/5/1

N2 - In this paper, we report an L g = 25 nm InGaAs/InAlAs HEMT on InP substrate that delivers excellent high-frequency characteristics. The device exhibited a value of maximum transconductance (g m-max) = 2.8 mS μm-1 at V DS = 0.8 V and on-resistance (R ON) = 279 Ω μm. At I D = 0.56 mA μm-1 and V DS = 0.5 V, the same device displayed an excellent combination of f T = 703 GHz and f max = 820 GHz. To the best of the authors' knowledge, this is the first demonstration of a transistor with both f T and f max over 700 GHz on any material system.

AB - In this paper, we report an L g = 25 nm InGaAs/InAlAs HEMT on InP substrate that delivers excellent high-frequency characteristics. The device exhibited a value of maximum transconductance (g m-max) = 2.8 mS μm-1 at V DS = 0.8 V and on-resistance (R ON) = 279 Ω μm. At I D = 0.56 mA μm-1 and V DS = 0.5 V, the same device displayed an excellent combination of f T = 703 GHz and f max = 820 GHz. To the best of the authors' knowledge, this is the first demonstration of a transistor with both f T and f max over 700 GHz on any material system.

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L _g = 25 nm InGaAs/InAlAs high-electron mobility transistors with both f _T and f _max in excess of 700 GHz

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