L g = 25 nm InGaAs/InAlAs high-electron mobility transistors with both f T and f max in excess of 700 GHz

Hyeon Bhin Jo; Do Young Yun; Ji Min Baek; Jung Hee Lee; Tae Woo Kim; Dae Hyun Kim; Takuya Tsutsumi; Hiroki Sugiyama; Hideaki Matsuzaki

doi:10.7567/1882-0786/ab1943

L _g = 25 nm InGaAs/InAlAs high-electron mobility transistors with both f _T and f _max in excess of 700 GHz

Hyeon Bhin Jo
, Do Young Yun
, Ji Min Baek
, Jung Hee Lee
, Tae Woo Kim
, Dae Hyun Kim
, Takuya Tsutsumi
, Hiroki Sugiyama
, Hideaki Matsuzaki

School of Electronics Engineering

Kyungpook National University
University of Ulsan
Nippon Telegraph & Telephone

Research output: Contribution to journal › Article › peer-review

42 Scopus citations

Abstract

In this paper, we report an L _g = 25 nm InGaAs/InAlAs HEMT on InP substrate that delivers excellent high-frequency characteristics. The device exhibited a value of maximum transconductance (g _m-max) = 2.8 mS μm^-1 at V _DS = 0.8 V and on-resistance (R _ON) = 279 Ω μm. At I _D = 0.56 mA μm^-1 and V _DS = 0.5 V, the same device displayed an excellent combination of f _T = 703 GHz and f _max = 820 GHz. To the best of the authors' knowledge, this is the first demonstration of a transistor with both f _T and f _max over 700 GHz on any material system.

Original language	English
Article number	054006
Journal	Applied Physics Express
Volume	12
Issue number	5
DOIs	https://doi.org/10.7567/1882-0786/ab1943
State	Published - 1 May 2019

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title = "L g = 25 nm InGaAs/InAlAs high-electron mobility transistors with both f T and f max in excess of 700 GHz",

abstract = "In this paper, we report an L g = 25 nm InGaAs/InAlAs HEMT on InP substrate that delivers excellent high-frequency characteristics. The device exhibited a value of maximum transconductance (g m-max) = 2.8 mS μm-1 at V DS = 0.8 V and on-resistance (R ON) = 279 Ω μm. At I D = 0.56 mA μm-1 and V DS = 0.5 V, the same device displayed an excellent combination of f T = 703 GHz and f max = 820 GHz. To the best of the authors' knowledge, this is the first demonstration of a transistor with both f T and f max over 700 GHz on any material system.",

author = "Jo, \{Hyeon Bhin\} and Yun, \{Do Young\} and Baek, \{Ji Min\} and Lee, \{Jung Hee\} and Kim, \{Tae Woo\} and Kim, \{Dae Hyun\} and Takuya Tsutsumi and Hiroki Sugiyama and Hideaki Matsuzaki",

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doi = "10.7567/1882-0786/ab1943",

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T1 - L g = 25 nm InGaAs/InAlAs high-electron mobility transistors with both f T and f max in excess of 700 GHz

AU - Jo, Hyeon Bhin

AU - Yun, Do Young

AU - Baek, Ji Min

AU - Lee, Jung Hee

AU - Kim, Tae Woo

AU - Kim, Dae Hyun

AU - Tsutsumi, Takuya

AU - Sugiyama, Hiroki

AU - Matsuzaki, Hideaki

PY - 2019/5/1

Y1 - 2019/5/1

N2 - In this paper, we report an L g = 25 nm InGaAs/InAlAs HEMT on InP substrate that delivers excellent high-frequency characteristics. The device exhibited a value of maximum transconductance (g m-max) = 2.8 mS μm-1 at V DS = 0.8 V and on-resistance (R ON) = 279 Ω μm. At I D = 0.56 mA μm-1 and V DS = 0.5 V, the same device displayed an excellent combination of f T = 703 GHz and f max = 820 GHz. To the best of the authors' knowledge, this is the first demonstration of a transistor with both f T and f max over 700 GHz on any material system.

AB - In this paper, we report an L g = 25 nm InGaAs/InAlAs HEMT on InP substrate that delivers excellent high-frequency characteristics. The device exhibited a value of maximum transconductance (g m-max) = 2.8 mS μm-1 at V DS = 0.8 V and on-resistance (R ON) = 279 Ω μm. At I D = 0.56 mA μm-1 and V DS = 0.5 V, the same device displayed an excellent combination of f T = 703 GHz and f max = 820 GHz. To the best of the authors' knowledge, this is the first demonstration of a transistor with both f T and f max over 700 GHz on any material system.

UR - https://www.scopus.com/pages/publications/85065667515

U2 - 10.7567/1882-0786/ab1943

DO - 10.7567/1882-0786/ab1943

M3 - Article

AN - SCOPUS:85065667515

SN - 1882-0778

VL - 12

JO - Applied Physics Express

JF - Applied Physics Express

IS - 5

M1 - 054006

ER -

L _g = 25 nm InGaAs/InAlAs high-electron mobility transistors with both f _T and f _max in excess of 700 GHz

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